Abstract:We report a surface x-ray diffraction study of the structure of In films grown on Si(111)-(7 x 7) and Si(111)-(root 3 x root 3)-In substrates at a low temperature (135 K). The (7 x 7) reconstruction of the clean Si(111) surface is found to persist upon burial by the In. X-ray reflectivity measurements yield patterns that deviate strongly from the ideal case; the results suggest a complex In film structure, possibly distorted by the corrugated interfacial reconstruction. By contrast, In films grown on the Si(111)-(root 3 x root 3)-In surface exhibit reflectivity data that are much closer to the ideal case. The films are found to grow approximately layer by layer, resulting in a relatively small roughness. Upon annealing, the films develop preferred thicknesses at 10, 13, and 16 monolayers (MLs). Previous photoemission studies revealed preferred thicknesses at 4 and 7 MLs. Putting these results together, the preferred thickness sequence, 4, 7, 10, 13, and 16 ML, establishes a trilayer oscillation period. This period is expected from the known electronic structure of In, and arises from quantum confinement of the In valence electrons. This is the second example, after the well-known bilayer period in Pb, which shows quantum oscillations over a wide range of film thickness.

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Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Growth of Cu Films on Si(111)-7×7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Quantum Size Effect Induced Dilute Atomic Layers in Ultrathin Al Films

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Growth Of Atomically Flat Nanofilms And Surface Superstructures Of Intrinsic Liquid Alloys

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Growth, Stability and Morphology Evolution of Pb Films on Si(111) Prepared at Low Temperature

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Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Compositional Ordering in Sige Alloy Thin Films

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Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition