Abstract:The evolution of surface roughness in epitaxial Si0.7Ge0.3 alloys grown on Si(001) as a function of temperature (200-600 degrees C), thickness (t=7.5-100 nm), and substrate miscut were investigated by atomic force microscopy and quantified in terms of the height-difference correlation function G(rho), in which rho is lateral distance and [G(rho-->infinity)](1/2) is proportional to the surface width. The films were deposited by ultrahigh vacuum ion-beam sputter deposition at 0.1 nm s(-1). Strain-induced surface roughening was found to dominate in alloys grown on singular Si(001) substrates at T-s greater than or equal to 450 degrees C where [G(rho-->infinity)](1/2) initially increases with increasing t through the formation of coherent islanding. The islands are preferentially bounded along [100] directions and exhibit 105 faceting. This tendency is enhanced, with much better developed [100] islands separated by deep trenches-of interest for growth of self-assembled nanostructures-in films grown on Si(001)-4 degrees[100]. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures (T-s less than or equal to 250 degrees C), film surfaces roughen kinetically, due to limited adatom diffusivity, but at far lower rates than in the higher-temperature strain-induced regime. Si0.7Ge0.3 alloy surfaces are smoother, while the films exhibit larger critical epitaxial thicknesses, than those of pure Si films grown in this temperature regime. There is an intermediate growth temperature range, however, over which the alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation. This latter result is of potential importance for device fabrication. (C) 1996 American Institute of Physics.

Compositional Ordering in Sige Alloy Thin Films

Morphology And Microstructure Of Tensile-Strained Sige(001) Thin Epitaxial Films

Evolution of Surface Roughness in Epitaxial Si0.7ge0.3(001) As A Function of Growth Temperature (200-600 Degrees C) and Si(001) Substrate Miscut

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Ordered Domain Lateral Location, Symmetry, And Thermal Stability In Ge:Si Islands

Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit

Composition Dependence Of Surface Morphology Of Ultrathin A-Sige : H Alloys Studying By Atomic Force Microscopy

Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors

Compositional dependence of the structural and optical properties of chalcogenide thin films

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Short-range order in two-dimensional binary alloys

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

The First Principle Study of the Electronic Structure of Si Ge(1−) Alloy Films

Two-dimensional Growth of Al Films on Si(1 1 1)-7 × 7 at Low-Temperature

Growth Of Atomically Flat Nanofilms And Surface Superstructures Of Intrinsic Liquid Alloys

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Growth and Fundamental Properties of Sige Bulk Crystals

Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer