Abstract:Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Quantum Size Effect Induced Dilute Atomic Layers in Ultrathin Al Films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Formation mechanism and photoelectric properties of Al2O3 film based on atomic layer deposition

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Microstructure and Morphology of SiOx Film Deposited by APCVD

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Anomalous Lattice Shrinking of LaTiO3 Thin Film on SrTiO3 (111) Induced by Three-Dimensional Electron Transfer

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Interfacial structures of LaAlO 3 films on Si(100) substrates

Growth of Ultrathin Al2O3 Films on n-InP Substrates as Insulating Layers by RF Magnetron Sputtering and Study on the Optical and Dielectric Properties

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

Optical Properties of SiOx Film on Aluminum Substrate Prepared by APCVD