Interfacial structures of LaAlO 3 films on Si(100) substrates

X.B. Lu,Z.G. Liu,G.H. Shi,H.Q. Ling,H.W. Zhou,X.P. Wang,B.Y. Nguyen

DOI: https://doi.org/10.1007/s00339-003-2090-z

2004-01-01

Applied Physics A

Abstract:This paper investigates the interfacial characteristics of LaAlO 3 (LAO) and LaAlO x N y (LAON) films deposited directly on silicon substrates by the pulsed-laser deposition technique. High-resolution transmission electron microscopy (HRTEM) pictures indicate that an interfacial reaction between LAO and Si often exists. The interfacial layer thickness of LAO films deposited in a nitrogen ambient atmosphere is smaller than that of LAO films deposited in an oxygen ambient atmosphere. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to study the composition of the interfacial layer. The shift of the La 3d photoelectron peak to a higher binding energy compared to LaAlO 3 , the shift of the Al 2p peak to a higher binding energy compared to LaAlO 3 , the shift of the Si 2p peak to a lower binding energy compared to SiO 2 and the intermediate location of the O 1s peak compared to LaAlO 3 and SiO 2 indicate the existence of a La–Al–Si–O bonding structure, which was also proved by the AES depth profile of LAO films. It can be concluded that the interfacial layer is not simply SiO 2 but a compound of La–Al–Si–O.