Abstract:Atomic layer deposition (ALD) is a highly useful technique to grow thin film materials, and the initial growth of ALD is of particular importance for achieving high-quality materials and interfaces. In this work, we investigate the initial ALD growth of nickel sulfide (NiS) on a SiOx surface, from bis(N,N'-di-tert-butylacetamidinato)nickel(II) (Ni(amd)(2)) and H2S, by using the in situ techniques of X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering (LEIS). The mechanism of the initial ALD growth is found to be rather different from that in the later steady film growth. In the initial ALD cycles, the XPS results show a drastic cyclic variation of the signals for the Ni-O bonds, with prominently observable Ni-O signals after each Ni(amd)(2) dose but almost negligible after the subsequent H2S dose. These results suggest that the Ni-O bonds are first formed on the surface in the Ni(amd)(2) half-cycles and then mostly converted to NiS in the following H2S half-cycles. To describe this initial ALD growth process, a reaction-agglomeration mechanistic scheme is proposed. In this scheme, the conversion from Ni-O to NiS in the H2S half-cycles is suggested to be accompanied by the spontaneous agglomeration of the ligand-stripped Ni-containing species to afford NiS clusters. This agglomeration can re-expose the surface of SiOx and therefore allow the surface to further react with Ni(amd)(2) in the subsequent ALD cycles. With the further use of LEIS, the transition from the initial reaction-agglomeration growth to the continuous steady film growth is found to be between 100 and 300 ALD cycles. Ex situ atomic force microscopy and transmission electron microscopy are further employed to corroborate the presence of the agglomeration during the initial growth. The results reported herein and the implied growth mechanism should be of great representativeness for the ALD of metal sulfides, and therefore, the findings should be highly valuable for future engineering of functional metal sulfide nanomaterials and interfaces by ALD.

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

X-Ray Reflectometry and Spectroscopic Ellipsometry Characterization of Al2o3 Atomic Layer Deposition on Hf-Last and Nh3 Plasma Pretreatment Si Substrates

Initial Growth and Agglomeration During Atomic Layer Deposition of Nickel Sulfide

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Recent Advances in Mechanism Investigation of Atomic Layer Deposition by in Situ Photoelectron Spectroscopy

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring

In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

High-Quality thin SiO2 films grown by atomic layer deposition using tris(dimethylamino)silane (TDMAS) and Ozone

In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Influence of Surface Preparation on Atomic Layer Deposition of Pt Films

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]o[sub 3]∕si Interfaces for Advanced Gate Stacks

A First-Principles Investigation of Interfacial Properties and Electronic Structure of SiO2/Al Interface

Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy

Surface Pseudorotation in Lewis-Base-Catalyzed Atomic Layer Deposition of SiO2: Static Transition State Search and Born–Oppenheimer Molecular Dynamics Simulation

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory