Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Suppressing substrate oxidation during plasma-enhanced atomic layer deposition on semiconductor surfaces

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

In-situ diagnosis during preparation of SiO_x thin films by mass spectroscopy and their characteristics

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Stepwise Mechanism and H2o-Assisted Hydrolysis in Atomic Layer Deposition of Sio2 Without A Catalyst

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Post-Plasma SiOx Coatings of Metal and Metal Oxide Nanoparticles for Enhanced Thermal Stability and Tunable Photoactivity Applications

Rapid atomic layer deposition of silica nanolaminates: synergistic catalysis of Lewis/Brønsted acid sites and interfacial interactions.

Study on OH radical oxidation of 4H-SiC in plasma based on ReaxFF molecular dynamics simulation

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Anisotropic etching behavior and topography formation mechanism of silicon solar cell surface textured by atmospheric plasma

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring