Abstract:The effects of different Lewis-base catalysts, NC5H5, N(CH3)(3), NH3, NH2CH3, and NH(CH3)(2), on the possible reaction pathways in atomic layer deposition (ALD) of SiO2 are investigated by density functional theory (DFT) calculations on both single and double -OH* surface models. The ALD of SiO2 undergoes successive self-terminating SiCl4 (A) and H2O (B) half reactions, respectively. On the basis of the double -OH* surface model, the rate-limiting step is the first SiCl4 half reaction with an activation energy of about 29.0 kcal/mol for the formation of the bridged -SiCl2*- group in the absence of catalysts. The activation energy of the subsequent H2O half reaction is slightly lower than that of the first half reaction. The selected Lewis-base catalysts can effectively catalyze both half reactions in the ALD growth of SiO2 through strong hydrogen bonding interaction with reaction substrates, with the activation energies of both half reactions reduced to about 1.3-14.6 kcal/mol. However, the desorption of byproduct in the H2O half reaction becomes the rate-determined step in the catalytic ALD process. The effects of alkalinity and steric hindrance of various catalysts on reaction pathways are tested. The catalytic activities of these Lewis bases are qualitatively correlated to their alkalities. As the pK(a) value increases, the adsorption of precursors becomes stronger and the activation energy decreases in both half reactions except N(CH3)(3) with pK(a) = 9.8. The reactions catalyzed by N(CH3)(3) with the largest spacing size are slightly blocked by its steric hindrance relative to those reactions catalyzed by NH3. In consideration of the neighboring -OH* groups, the Lewis bases with relatively large steric hindrance could not effectively catalyze half reactions to form the bridged intermediates between two nearest-neighboring -OH* groups. The compromise between alkalinity and steric hindrance of Lewis-base catalysts may be important for the rational design of effective catalysts for the low-temperature growth of metal oxides.

Stepwise Mechanism and H2o-Assisted Hydrolysis in Atomic Layer Deposition of Sio2 Without A Catalyst

Influence of alkalinity and steric hindrance of lewis-base catalysts on atomic layer deposition of SiO 2

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

Atomic layer deposition mechanism of hafnium dioxide using hafnium precursor with amino ligands and water

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Initial Surface Reactions Mechanisms Of Atomic Layer Deposition Tio2 On H/Si(100)-2x1 Surface

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

H2o And O-2 Co-Adsorption On 3c-Sic (111) By First-Principle Calculations: The Role Of Water In Initial Oxidation

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Initial Oxidation of 3C-Sic (111) in Oxidizing Atmosphere Containing Water Vapor: H2O Adsorption from First-Principles Calculations

Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide

Sub-Monolayer Control of Mixed-Oxide Support Composition in Catalysts Via Atomic Layer Deposition: Selective Hydrogenation of Cinnamaldehyde Promoted by (Sio2-Ald)-pt/al2o3

First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H2O-Based Atomic Layer Deposition of Zirconium Dioxide

Ultrathin Sio2 Films Grown by Atomic Layer Deposition Using Tris(Dimethylamino)Silane (tdmas) and Ozone