Abstract:Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a promising technique for high-throughput and low-temperature deposition of ultrathin films for applications where volume and costs are particularly relevant. The number of atmospheric-pressure PE-s-ALD processes developed so far is rather limited, and the fundamental aspects of their growth mechanisms are largely unexplored. This work presents a study of the atmospheric-pressure PE-s-ALD process of Al 2 O 3 using trimethylaluminum [TMA, Al(CH 3 ) 3 ] and Ar–O 2 plasma within the temperature range of 80–200 °C. Thin-film analysis revealed low impurity contents and a decreasing growth-per-cycle (GPC) with increasing temperature. The underlying chemistry of the process was studied with a combination of gas-phase infrared spectroscopy on the exhaust plasma gas and optical emission spectroscopy (OES) on the plasma zone. Among the chemical species formed in the plasma half-cycle, CO 2 , H 2 O, CH 4 , and CH 2 O were identified. The formation of these products confirms that the removal of CH 3 ligands during the plasma half-cycle occurs through two reaction pathways that have a different temperature dependences: (i) combustion reactions initiated by O 2 plasma species and leading to CO 2 and H 2 O formation and (ii) thermal ALD-like reactions initiated by the H 2 O molecules formed in pathway (i) and resulting in CH 4 production. With increasing temperature, the dehydroxylation of OH groups cause less TMA adsorption which leads to less CO 2 and H 2 O from the combustion reactions in the plasma step. At the same time, the higher reactivity of H 2 O at higher temperatures initiates more thermal ALD-like reactions, thus producing relatively more CH 4 . The CH 4 can also undergo further gas-phase reactions leading to the formation of CH 2 O as was theoretically predicted. Another observation is that O 3 , which is naturally produced in the atmospheric-pressure O 2 plasma, decomposes at higher temperatures mainly due to an increase of gas-phase collisions. In addition to the new insights into the growth mechanism of atmospheric-pressure PE-s-ALD of Al 2 O 3 , this work presents a method to study both the surface chemistry during spatial ALD to further extend our fundamental understanding of the method.

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2o3 Ultra-Thin Film on Si Substrate

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring

Crystalline as-deposited TiO 2 anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Multiple Short Pulse Process for Low-Temperature Atomic Layer Deposition and Its Transient Steric Hindrance

Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water

Effect of Deposition Temperature on Al2O3 Films Deposited by Atomic Layers Deposition

Preparation and Characterization of Α-Al2o3 Film by Low Temperature Thermal Oxidation of Al8Cr5 Coating

Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy

Plasma-Assisted ALD of Al2O3 at Low Temperatures: Reaction Mechanisms and Material Properties

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

Effect of Various Oxidants on Reaction Mechanisms, Self‐Limiting Natures and Structural Characteristics of Al2O3 Films Grown by Atomic Layer Deposition

Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method

Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces