Abstract:This study investigates the impact of vapour-phase precursor flow rates—specifically those of trimethylaluminum (TMA) and deionized water (H2O)—on the deposition of aluminum oxide (Al2O3) thin films through atomic layer deposition (ALD). It explores how these flow rates influence film growth kinetics and surface reactions, which are critical components of the ALD process. The research combines experimental techniques with a zero-dimensional theoretical model, designed specifically to simulate the deposition dynamics. This model integrates factors such as surface reactions and gas partial pressures within the ALD chamber. Experimentally, Al2O3 films were deposited at varied TMA and H2O flow rates, with system conductance guiding these rates across different temperature settings. Film properties were rigorously assessed using optical reflectance methods and attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy. The experimental findings revealed a pronounced correlation between precursor flow rates and film growth. Specifically, at 150 °C, film thickness reached saturation at a TMA flow rate of 60 sccm, while at 200 °C, thickness peaked and then declined with increasing TMA flow above this rate. Notably, higher temperatures generally resulted in thinner films due to increased desorption rates, whereas higher water flow rates consistently produced thicker films, emphasizing the critical role of water vapour in facilitating surface reactions. This integrative approach not only deepens the understanding of deposition mechanics, particularly highlighting how variations in precursor flow rates distinctly affect the process, but also significantly advances operational parameters for ALD. These insights are invaluable for enhancing the application of ALD technologies across diverse sectors, including microelectronics, photovoltaics, and biomedical coatings, effectively bridging the gap between theoretical predictions and empirical results.

Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2o3 Ultra-Thin Film on Si Substrate

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Anti-reflection Coating at 550 Nm Fabricated by Atomic Layer Deposition

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Mechanism of Interfacial Layer Suppression after Performing Surface Al(Ch3)(3) Pretreatment During Atomic Layer Deposition of Al2o3

The Combination Self-Cleaning Effect of Trimethylaluminium and Tetrakis (Dimethyl-Amino) Hafnium Pretreatments on GaAs

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

X-Ray Reflectometry and Spectroscopic Ellipsometry Characterization of Al2o3 Atomic Layer Deposition on Hf-Last and Nh3 Plasma Pretreatment Si Substrates

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Effects of NH3 Plasma Pretreatment on Initial Reactions of Atomic Layer Deposition TaN Barrier Layer on SiOC Dielectric

Effect of Deposition Temperature on Al2O3 Films Deposited by Atomic Layers Deposition

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Plasma Enhanced Atomic Layer Deposited Platinum Thin Film on Si Substrate with Tma Pretreatment

Influence of Surface Preparation on Atomic Layer Deposition of Pt Films

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces