Effect of Deposition Temperature on Al2O3 Films Deposited by Atomic Layers Deposition

Yi Luo,Yue Li,Zhizeng Fang,Xing Zhang,Yi Wang,Dedong Han
DOI: https://doi.org/10.1109/ivec56627.2023.10157669
2023-01-01
Abstract:In recent years, atomic layer deposition (ALD) fabrication process has attracted wide attention due to its advantages in thin film uniformity, conformity, compactness, composition, interface control and so on, and aliminum oxide (Al 2 O 3 ) is widely used in semiconductor field as many applications. The preparation technology of low temperature Al 2 O 3 film based on ALD technology was studied in this paper. Through the characterization of the surface roughness, growth per rate (GPC), dielectric constant and other properties of the films, the effects of deposition temperature on the properties of the films were studied, and the optimized Al 2 O 3 film preparation conditions were obtained.
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