Abstract:The deposition of thin solid films is central to many industrial applications, and chemical vapor deposition (CVD) methods are particularly useful for this task. For one, the isotropic nature of the adsorption of chemical species affords even coverages on surfaces with rough topographies, an increasingly common requirement in microelectronics. Furthermore, by splitting the overall film-depositing reactions into two or more complementary and self-limiting steps, as it is done in atomic layer depositions (ALD), film thicknesses can be controlled down to the sub-monolayer level. Thanks to the availability of a vast array of inorganic and metalorganic precursors, CVD and ALD are quite versatile and can be engineered to deposit virtually any type of solid material. On the negative side, the surface chemistry that takes place in these processes is often complex, and can include undesirable side reactions leading to the incorporation of impurities in the growing films. Appropriate precursors and deposition conditions need to be chosen to minimize these problems, and that requires a proper understanding of the underlying surface chemistry. The precursors for CVD and ALD are often designed and chosen based on their known thermal chemistry from inorganic chemistry studies, taking advantage of the vast knowledge developed in that field over the years. Although a good first approximation, however, this approach can lead to wrong choices, because the reactions of these precursors at gas-solid interfaces can be quite different from what is seen in solution. For one, solvents often aid in the displacement of ligands in metalorganic compounds, providing the right dielectric environment, temporarily coordinating to the metal, or facilitating multiple ligand-complex interactions to increase reaction probabilities; these options are not available in the gas-solid reactions associated with CVD and ALD. Moreover, solid surfaces act as unique "ligands", if these reactions are to be viewed from the point of view of the metalorganic complexes used as precursors: they are bulky and rigid, can provide multiple binding sites for a single reaction, and can promote unique bonding modes, especially on metals, which have delocalized electronic structures. The differences between the molecular and surface chemistry of CVD and ALD precursors can result in significant variations in their reactivity, ultimately leading to unpredictable properties in the newly grown films. In this Account, we discuss some of the main similarities and differences in chemistry that CVD/ALD precursors follow on surfaces when contrasted against their known behavior in solution, with emphasis on our own work but also referencing other key contributions. Our approach is unique in that it combines expertise from the inorganic, surface science, and quantum-mechanics fields to better understand the mechanistic details of the chemistry of CVD and ALD processes and to identify new criteria to consider when designing CVD/ALD precursors.

(Invited) Surface Thermolysis of ALD Precursors and Its Implications for Deposition

Surface Thermolytic Behavior Of Nickel Amidinate And Its Implication On The Atomic Layer Deposition Of Nickel Compounds

Atomic Layer Deposition of Noble Metals – New Developments in Nanostructured Catalysts

(Invited) Atomistic Insights into Continuous and Area-Selective ALD Processes: First-Principles Simulations of the Underpinning Surface Chemistry

The surface chemistry of the atomic layer deposition of metal thin films

Atomic Layer Deposition of Thin Films: from a Chemistry Perspective

Numerical Simulation of the Temperature Excursions of Porous Substrates During Atomic Layer Deposition

Surface Chemistry During Atomic-Layer Deposition of Nickel Sulfide from Nickel Amidinate and H2S

Plasma-Assisted ALD of Al2O3 at Low Temperatures: Reaction Mechanisms and Material Properties

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

The Chemistry of Inorganic Precursors during the Chemical Deposition of Films on Solid Surfaces

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Initial Growth and Agglomeration During Atomic Layer Deposition of Nickel Sulfide

Accurately computed dimerization fraction of ALD precursors and their impact on surface reactivity in area-selective atomic layer deposition

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Nucleation Effects in the Atomic Layer Deposition of Nickel–Aluminum Oxide Thin Films

(Invited) Nucleation, Growth and Location Regulation of Heterogeneous Catalysts Synthesized by Atomic Layer Deposition

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Atomic Layer Deposition Nucleation Dependence on Diamond Surface Termination