Atomic Layer Deposition of Noble Metals – New Developments in Nanostructured Catalysts

Junling Lu,Yu Lei,Jeffrey W.
DOI: https://doi.org/10.5772/33082
2012-01-01
Abstract:byproduct gases are swept away.Desirable characteristics for ALD precursors include high volatility, good thermal stability at the ALD growth temperatures, and high reactivity with the other compound used for the film growth.A purge period is introduced between each precursor dose to prevent mixing of the chemicals which would cause non self-limited growth.Each ALD cycle can last seconds to hours depending on factors such as the reactivity of the precursors and the surface area and porosity of the substrate.ALD research and process development are greatly facilitated using in-situ measurements.For instance, an in-situ quartz crystal microbalance (QCM) with sub-monolayer sensitivity and 10-20 Hz update rate, is a valuable tool for monitoring film growth in real time, and can also provide details for understanding the ALD surface chemistry.Similarly, an in situ quadrupole mass spectrometer (QMS) installed in the reactor can help to understand the growth mechanism by identifying the gas phase products of the ALD surface reactions.
What problem does this paper attempt to address?