Abstract:Atomic layer deposition (ALD) is a highly useful technique to grow thin film materials, and the initial growth of ALD is of particular importance for achieving high-quality materials and interfaces. In this work, we investigate the initial ALD growth of nickel sulfide (NiS) on a SiOx surface, from bis(N,N'-di-tert-butylacetamidinato)nickel(II) (Ni(amd)(2)) and H2S, by using the in situ techniques of X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering (LEIS). The mechanism of the initial ALD growth is found to be rather different from that in the later steady film growth. In the initial ALD cycles, the XPS results show a drastic cyclic variation of the signals for the Ni-O bonds, with prominently observable Ni-O signals after each Ni(amd)(2) dose but almost negligible after the subsequent H2S dose. These results suggest that the Ni-O bonds are first formed on the surface in the Ni(amd)(2) half-cycles and then mostly converted to NiS in the following H2S half-cycles. To describe this initial ALD growth process, a reaction-agglomeration mechanistic scheme is proposed. In this scheme, the conversion from Ni-O to NiS in the H2S half-cycles is suggested to be accompanied by the spontaneous agglomeration of the ligand-stripped Ni-containing species to afford NiS clusters. This agglomeration can re-expose the surface of SiOx and therefore allow the surface to further react with Ni(amd)(2) in the subsequent ALD cycles. With the further use of LEIS, the transition from the initial reaction-agglomeration growth to the continuous steady film growth is found to be between 100 and 300 ALD cycles. Ex situ atomic force microscopy and transmission electron microscopy are further employed to corroborate the presence of the agglomeration during the initial growth. The results reported herein and the implied growth mechanism should be of great representativeness for the ALD of metal sulfides, and therefore, the findings should be highly valuable for future engineering of functional metal sulfide nanomaterials and interfaces by ALD.

Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy

Microstructure-dependent Conformal Atomic Layer Deposition on 3D Nanotopography.

Atomic Layer Deposition of Noble Metals – New Developments in Nanostructured Catalysts

Nonlinear growth of zinc tin oxide thin films prepared by atomic layer deposition

Quantitative in situ synchrotron x-ray analysis of the ALD/MLD growth of transition metal dichalcogenide TiS 2 ultrathin films

In Situ X‐Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Development of a Scanning Probe Microscopy Integrated Atomic Layer Deposition System for in Situ Successive Monitoring of Thin Film Growth

In Situ Scanning Tunneling Microscopy Studies of the Evolution of Surface Morphology and Microstructure in Epitaxial TiN(001) Grown by Ultra-High-vacuum Reactive Magnetron Sputtering

Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy

Initial Growth and Agglomeration During Atomic Layer Deposition of Nickel Sulfide

In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques

Deciphering phase evolution in complex metal oxide thin films via high-throughput materials synthesis and characterization

Optical Constants and Band Gap Evolution with Phase Transition in Sub-20-nm-Thick TiO2 Films Prepared by ALD

Nucleation, Hydroxylation, and Crystallization Effects in ALD SrO

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium

Real-Time Observation and Optimization of Tungsten Atomic Layer Deposition Process Cycle

Disentangling Epitaxial Growth Mechanisms of Solution Derived Functional Oxide Thin Films

Properties and morphology of TiN films deposited by atomic layer deposition