Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

Disentangling Epitaxial Growth Mechanisms of Solution Derived Functional Oxide Thin Films

Growth Dependencies of Epitaxial Oxide Thin Films Prepared by Pulsed Laser Deposition

Interface Engineering In Epitaxial Growth Of Layered Oxides Via A Conducting Layer Insertion

From Initial to Late Stages of Epitaxial Thin Film Growth: Stm Analysis and Atomistic or Coarse-Grained Modeling

Elucidating the Epitaxial Growth Mechanisms of Solution-Derived BiVO4 Thin Films Utilizing Rapid Thermal Annealing

Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Controlled Growth of Complex Polar Oxide Films with Atomically Precise Molecular Beam Epitaxy

Optical and electronic functionality arising from controlled defect formation in nanoscale complex oxide lateral epitaxy

Substrate surface engineering for tailoring properties of functional ceramic thin films

Aqueous chemical growth of advanced nanostructured metal oxides thin films

Deciphering phase evolution in complex metal oxide thin films via high-throughput materials synthesis and characterization

Epitaxial growth characteristics of oxide thin films prepared by pulsed laser deposition

Epitaxial Growth By Chemical Solution Deposition Of (110) Ndnio3-Delta Films With A Sharp Metal - Insulator Transition Annealed Under Ambient Oxygen

Initial Growth of Bi4 Lati3 Feo15 Thin Films on Srtio3, Mgo and Ysz Substrates

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing

Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

The Epitaxial Growth and Interfacial Strain Study of VO2/MgF2 (001) Films by Synchrotron Based Grazing Incidence X-ray Diffraction

Exposing High-Energy Surfaces by Rapid-Anneal Solid Phase Epitaxy

Quantitative Strain Analysis and Growth Mode of Pulsed Laser Deposited Epitaxial CoFe2O4 Thin Films

All-epitaxial Growth of Single-Crystalline Ba0.6Sr0.4TiO3/Ir/MgO/Si Heterostructures