Epitaxial Strain Tunable Conductivity and Charge Transport of Ba0.6La0.4TiO3 Thin Films Deposited by Pulsed Laser Deposition
Aihua Zhang,Qiang Li,Dao Wang,Yan Zhang,Yushan Li,Min Zeng,Xubing Lu,J-M Liu
DOI: https://doi.org/10.1063/5.0038995
IF: 2.877
2021-01-01
Journal of Applied Physics
Abstract:In this work, Ba0.6La0.4TiO3 (BLTO) thin films with a thickness of ∼30 nm were deposited by pulsed laser deposition on four different types of substrates, [MgO(100), LaAlO3(100), DyScO3(110), and GdScO3(110)], and their structures, charge transport behaviors, and related transport mechanisms were comprehensively explored. X-ray diffraction characterization revealed that all the BLTO films are epitaxially grown with strain ranging from ∼+0.65% to ∼−0.63%. All the films show a distinct semiconductor–metal transition behavior, and the transition temperature (TSM) decreases upon increasing the compressive strain. Their conductivities follow successively the variable-range hopping and small-polaron hopping mechanisms below TSM, and thermal excitation mechanism above TSM, while the corresponding temperature ranges are substrate dependent. Finally, Hall effect measurements confirmed that all the BLTO films possess semiconductor conduction behaviors, and the epitaxial strain can enhance carrier density. These results demonstrate that epitaxial strain can effectively tune the charge transport behaviors of BLTO thin films.