Abstract:The effects of tetragonal strain on the electronic and magnetic properties of strontium-doped lanthanum manganite, La2/3Sr1/3MnO3 (LSMO), are investigated by means of density-functional methods. As far as the structural properties are concerned, the comparison between theory and experiments for LSMO strained on the most commonly used substrates shows an overall good agreement: the slight overestimate (at most of 1–1.5%) for the equilibrium out-of-plane lattice constants points to possible defects in real samples. The inclusion of a Hubbard-like contribution on the Mn d states, according to the so-called ‘LSDA+U’ approach, is rather ineffective from the structural point of view, but much more important from the electronic and magnetic point of view. In particular, full half-metallicity, which is missed within a bare density-functional approach, is recovered within LSDA+U, in agreement with experiments. Moreover, the half-metallic behaviour, particularly relevant for spin-injection purposes, is independent of the chosen substrate and is achieved for all the considered in-plane lattice constants. More generally, strain effects are not seen to crucially affect the electronic structure: within the considered tetragonalization range, the minority gap is only slightly (i.e. by about 0.1–0.2 eV) affected by a tensile or compressive strain. Nevertheless, we show that the growth on a smaller in-plane lattice constant can stabilize the out-of-plane versus in-plane eg orbital and significantly change their relative occupancy. Since eg orbitals are key quantities for the double-exchange mechanism, strain effects are confirmed to be crucial for the resulting magnetic coupling.

Effects of Lattice Strains on the Interfacial Potential in La0.67ca0.33mno3/Srtio3 : Nb Heterojunctions

Interfacial Potential in La1−xCaxMnO3∕SrTiO3:Nb Junctions with Different Ca Contents

Physical properties of Cu/La<sub>0.67</sub>Ba<sub>0.33</sub>MnO<sub>3</sub>/SrTiO<sub>3</sub> : Nb junctions with ultrathin manganite layers

Photoelectronic Behaviors of Bilayer Ultrathin Films Manganite-Based Heterojunctions

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Effect of Film Thickness on Interfacial Barrier of Manganite-Based Heterojunctions

Electronic Transport and Magnetoresistance of A Heterojunction Composed of La0.7ce0.3mno3 and 1 Wt% Nb-Doped Srtio3

Unraveling Interfacial Strain and Interfacial Lattice Reconstruction Mechanism of Ultrathin LaMnO3+δ Layers in LaMnO3+δ/SrTiO3 Superlattices

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Influence of the Dynamic Lattice Strain on the Transport Behavior of Oxide Heterojunctions

Thickness-Dependent Rectifying Behavior in Heterojunctions of Tbmno3/Nb-1.0 Wt.%-Doped Srtio3

Bias-dependent Rectifying Properties of N-N Manganite Heterojunctions La1−xCaxMnO3/SrTiO3:Nb (X=0.65–1)

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Electronic Transport and Magnetoresistance in Ultrathin Manganite-Titanate Junctions

Magnetically and Electrically Tunable Transport Property of the Heterojunction Composed of La0.9Ca0.1MnO3+δand Nb-doped SrTiO3

Large Room-Temperature Magnetoresistance In Ultra-Thin La0.67sr0.33mno3/Nb : Srtio3 Junction

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Interfacial charge and strain effects on lanthanum doped barium stannate thin film under ferroelectric gating

Ab Initio Electronic and Magnetic Structure in La0.66Sr0.33MnO3: Strain and Correlation Effects

Evolution of electrical and magnetotransport properties with lattice strain in La0.7Sr0.3MnO3 film

Effect of thickness on the rectifying properties of La0.5Sr0.15MnO3/TiO2 heterostructures