Effect of Film Thickness on Interfacial Barrier of Manganite-Based Heterojunctions

Xie Yan-Wu,Guo De-Feng,Sun Ji-Rong,Shen Bao-Gen
DOI: https://doi.org/10.1088/1674-1056/19/11/117306
2010-01-01
Abstract:Interfacial barrier is a key factor that determines the performances of heterojunctions In this work, we study the effect of manganite film thickness on the effective interfacial barrier for La-0 Sr-67(0) 33MnO3/Nb SrTiO3 junctions The barrier is extracted from the forward current-voltage characteristics Our results demonstrate that the barrier decreases gradually from similar to 0 85 eV to similar to 0 60 eV when the film thickness decreases from 150 nm to 2 nm The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect
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