Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Xie Yan-Wu,Shen Bao-Gen,Sun Ji-Rong
DOI: https://doi.org/10.1088/1674-1056/17/6/056
2008-01-01
Chinese Physics B
Abstract:Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La(0.9)Ca(0.1)MnO(3+delta) film and a Nb-doped SrTiO(3) substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from similar to 60% to similar to 0. A possible mechanism accounting for this phenomenon is discussed.
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