Abstract:We report that epitaxial strain and chemical doping can be used cooperatively to tune the sharpness of metal-insulator transition (MIT) in epitaxial (La1−xPrx)0.67Ca0.33MnO3 (LPCMO) films. Compared to multiple MITs in anisotropically strained LPCMO/(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001)C (LSAT) films with a phase-separated ground state, the lattice-matched LPCMO/NdGaO3(110)Or (NGO) films show a sharp MIT near the Curie temperature (TC), with a ferromagnetic-metallic ground state. The sharpness of MIT, as evaluated by the temperature coefficient of resistance (TCR), can be two times larger in LPCMO/NGO films than in LPCMO/LSAT films. Moreover, for LPCMO/NGO films, TCR greatly relies on the Pr doping level x, where a maximum TCR value of 88.17% K−1 can be obtained at x = 0.25, but shows less dependence on the film thicknesses. These results suggest that the combination of epitaxial strain and chemical doping could be employed to control not only the ground state of the manganite films, but the sharpness of MIT at various TC, providing the feasibility to design manganite-based infrared devices in a broad temperature range.

Manipulating metal-to-insulator transition temperature in manganite–titanate junction by reverse electrical bias

Magnetically and Electrically Tunable Transport Property of the Heterojunction Composed of La0.9Ca0.1MnO3+δand Nb-doped SrTiO3

Bias-dependent Rectifying Properties of N-N Manganite Heterojunctions La1−xCaxMnO3/SrTiO3:Nb (X=0.65–1)

Electronic Transport and Magnetoresistance in Ultrathin Manganite-Titanate Junctions

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Large room-temperature magnetoresistance in ultra-thin La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub>/Nb : SrTiO<sub>3</sub>junction

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Large Room-Temperature Magnetoresistance In Ultra-Thin La0.67sr0.33mno3/Nb : Srtio3 Junction

Magnetic Field Effects On The Manganite Junction With Different Electronic Processes

Backward Diode Behavior in Oxygen-Excessive Manganite-Titanate P-N Junction

Manipulation of Quantum Interference Effects in La0.39Pr0.28Ca0.33MnO3−δ by P-N Junction at High Temperature

Interfacial Potential in La1−xCaxMnO3∕SrTiO3:Nb Junctions with Different Ca Contents

Transport Properties and Backward Diode-Like Behaviour in Manganite-Based P–i–n Junctions

Thickness-Dependent Rectifying Behavior in Heterojunctions of Tbmno3/Nb-1.0 Wt.%-Doped Srtio3

Electronic Transport and Magnetoresistance of A Heterojunction Composed of La0.7ce0.3mno3 and 1 Wt% Nb-Doped Srtio3

Controlling the Sharpness of Metal-Insulator Transition in Epitaxial (la1−xprx)0.67ca0.33mno3 (0 ≤ X ≤ 0.35) Films

Unusual Colossal Positive Magnetoresistance Of The N-N Heterojunction Composed Of La0.33ca0.67mno3 And Nb-Doped Srtio3

Rotation of Ferromagnetic Clusters Induced Magnetoresistance in the Junction Composed of La0.9ca0.1mno3+Delta and 1 Wt.% Nb-Doped Srtio3

Effect of Applied Magnetic Field on the Rectifying Characteristics in Self-Doped La0.9MnO3∕0.8wt%Nb–SrTiO3 Heteroepitaxial Junctions