Abstract:We report the effect of metal-insulator transition on electrical transport properties in manganite-based p-i-n heterojunctions, consisting of p-type La0.67Sr0.33MnO3-delta/Pr-0.7 Ca0.3MnO3-delta and n-type Si with a buffer layer of SiO2. As the temperature is higher than the metal-insulator transition temperature T-MI of manganite films, the current-voltage relation of these p-i-n junctions shows good forward rectifying behaviour. Once the temperature is below T-MI, the La0.67Sr0.33MnO3-delta/SiO2/Si p-i-n junction behaves like a backward diode. This backward diode-like behaviour in p-i-n junctions based on manganite can be understood by the change in electronic band structure of manganite films with temperature. We also found that the electric current in these p-i-n junctions is dominated by the tunnelling process at higher bias voltages and the space-charge-limited current process at lower bias voltages in these heterojunctions. This work reveals the various properties and the key role of metal-insulator transition in manganite based diodes.

Transport Properties and Backward Diode-Like Behaviour in Manganite-Based P–i–n Junctions

Backward diodelike behavior in La0.67Ca0.33MnO3−δ∕SrTiO3∕Nb–SrTiO3 p-i-n junction

Backward Diodelike Behavior In La0.67ca0.33mno3-Delta/Srtio3/Nb-Srtio3 P-I-N Junction

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Magnetically and Electrically Tunable Transport Property of the Heterojunction Composed of La0.9Ca0.1MnO3+δand Nb-doped SrTiO3

Bias-dependent Rectifying Properties of N-N Manganite Heterojunctions La1−xCaxMnO3/SrTiO3:Nb (X=0.65–1)

Manipulating metal-to-insulator transition temperature in manganite–titanate junction by reverse electrical bias

Backward Diode Behavior in Oxygen-Excessive Manganite-Titanate P-N Junction

Electronic Transport and Magnetoresistance in Ultrathin Manganite-Titanate Junctions

Manganite-based Heterojunction and Its Photovoltaic Effects

Thickness-Dependent Rectifying Behavior in Heterojunctions of Tbmno3/Nb-1.0 Wt.%-Doped Srtio3

Electronic Transport and Magnetoresistance of A Heterojunction Composed of La0.7ce0.3mno3 and 1 Wt% Nb-Doped Srtio3

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Superposed forward current–voltage characteristics in TbMnO3/n-Si and TbMnO3/p-Si heterostructures

Magnetotransport And Rectifying Properties In La0.67ca0.33mno3/Yttrium-Stabilized Zirconia/Si Heterojunction

A possible model for the positive magnetoresistance in manganite-based all-perovskite oxide films p-n junction

Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Unusual Colossal Positive Magnetoresistance Of The N-N Heterojunction Composed Of La0.33ca0.67mno3 And Nb-Doped Srtio3

Manipulation of reverse bias transport by photocarrier injection in Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3−δ</sub>/SiO<sub>2</sub>/Si heterojunction

Interfacial Potential in La1−xCaxMnO3∕SrTiO3:Nb Junctions with Different Ca Contents