Magnetotransport And Rectifying Properties In La0.67ca0.33mno3/Yttrium-Stabilized Zirconia/Si Heterojunction

Peilin Lang,Yonggang Zhao,Bo Yang,Xun Zhang,Jie Li,Pengye Wang,Dongning Zheng

DOI: https://doi.org/10.1063/1.2006980

IF: 4

2005-01-01

Applied Physics Letters

Abstract:A heterojunction has been fabricated by growing a La0.67Ca0.33MnO3 film on silicon with a buffer layer of yttrium-stabilized zirconia (YSZ). The current-voltage measurement shows that it is a diode with a good rectifying property. At low positive bias voltage, temperature dependence of the junction resistance shows a peak at a certain temperature, which shifts to low temperatures when the voltage is increased from 0.3 V to 0.7 V. This behavior is quite different from the previous reports on p-n junctions composed of manganites and Nb-doped SrTiO3. The heterojunction shows remarkable magnetoresistance for both positive and negative biases. The results were discussed by considering the depletion layers in both La0.67Ca0.33MnO3 and Si, and the tunneling through YSZ. This work shows the potential application of integrating manganite-based devices and semiconductor circuits. (c) 2005 American Institute of Physics.