Rectifying Characteristics and Tunable Magnetoresistance in Heterojunctions of La0.9Hf0.1MnO3/0.05 Wt.% Nb-doped SrTiO3

Yaping Qi,Xiangbo Liu,Hao Ni,Ming Zheng,Liping Chen,Lin Wang,Yucheng Jiang,Meng Zhao,Ju Gao

DOI: https://doi.org/10.1142/s0217979217450229

2017-01-01

International Journal of Modern Physics B

Abstract:La[Formula: see text]Hf[Formula: see text]MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La[Formula: see text]Hf[Formula: see text]MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current–voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.