Interface Magnetoresistance in Manganite-Titanate Heterojunctions

T. Susaki,N. Nakagawa,H. Y. Hwang
DOI: https://doi.org/10.48550/arXiv.cond-mat/0609315
2006-09-13
Abstract:We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate a new form of magnetoresistance arising from magnetic field changes of the interface band diagram via the strong electron-spin coupling in manganites.
Strongly Correlated Electrons,Materials Science
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