Abstract:The resistivity ρ(T), and thermoelectric power (TEP) S(T,H) in the manganite La0.85Te0.15Mn0.9Cu0.1O3 have been investigated systematically in the absence and presence of magnetic fields. A large negative magnetoresistance (MR) appears up to 5 T. In addition, S(T) of the sample shows an anomalous peak, which is suggested to be related to the contribution of phonon drag. Particularly, the thermally induced and the field-induced sign change of S below the Curie temperature TC is observed, implying the importance of spin polarization. In terms of the change of electronic structure, the orbital degree of freedom of the eg carriers can be responsible for the effective lifting of the degenerate eg band. Additionally, based on the fitting results of ρ(T) and S(T), the transport mechanism for the sample in the paramagnetic (PM) insulting region and low-temperature ferromagnetic (FM) insulating region below TC is suggested to be dominated by variable-range-hopping (VRH) conduction. However, in the intermediate-temperature FM metallic region below TC, the transport mechanism is considered to be dominated mainly electron–magnon scattering.

Temperature Dependence of Tunneling Magnetoresistance in Manganite Tunnel Junctions

Tunneling Magnetoresistance in Mixed-Valence Manganite Tunnel Junctions

Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

Large room-temperature magnetoresistance in ultra-thin La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub>/Nb : SrTiO<sub>3</sub>junction

Interface Magnetoresistance in Manganite-Titanate Heterojunctions

Electronic Transport and Magnetoresistance in Ultrathin Manganite-Titanate Junctions

Large Room-Temperature Magnetoresistance In Ultra-Thin La0.67sr0.33mno3/Nb : Srtio3 Junction

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Analytical Result of the Effect of Spin Scattering and Impurity-Assistance on Magnetoresistance in Doped Magnetic Tunneling Junctions

Spin polarization and transport in the manganite La0.85Te0.15Mn0.9Cu0.1O3

Possible Mechanism for Tunneling Magnetoresistance in La0.9Ba0.1MnO3/Nb-doped SrTiO3 P+–n Junctions

Enhanced Room Temperature Magnetoresistance and Cluster Spin Glass Behavior in Mo Doping La0.67Sr0.33MnO3

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

Spin-polarized Intergrain Tunneling Model for Low-Field Magnetoresistance in Polycrystalline Manganites

Temperature and Bias-Assisted Transport Properties of LSMO/AlO/CoFeB Magnetic Tunnel Junction

Magnetically and Electrically Tunable Transport Property of the Heterojunction Composed of La0.9Ca0.1MnO3+δand Nb-doped SrTiO3

Magnetic Field Effects On The Manganite Junction With Different Electronic Processes

Rotation of Ferromagnetic Clusters Induced Magnetoresistance in the Junction Composed of La0.9ca0.1mno3+Delta and 1 Wt.% Nb-Doped Srtio3

Manipulating metal-to-insulator transition temperature in manganite–titanate junction by reverse electrical bias

Structure Dependence of the Tunnel Magnetoresistance in Junctions with Three Ferromagnetic Layers

Theory for Tunnel Magnetoresistance Oscillation