Analytical Result of the Effect of Spin Scattering and Impurity-Assistance on Magnetoresistance in Doped Magnetic Tunneling Junctions

Y.C. Tao,X.F. Jiang,J. Wang,D.Y. Xing
DOI: https://doi.org/10.1140/epjb/e2003-00056-0
2003-01-01
Abstract:: An extended tunneling Hamiltonian method is proposed to study the temperature-dependent tunneling magnetoresistance (TMR) in doped magnetic tunnel junctions. It is found that for nonmagnetic dopants (Si), impurity-assisted tunneling is mainly elastic, giving rise to a weak spin polarization, thereby reduces the overall TMR, while for magnetic ions (Ni), the collective excitation of local spins in δ-doped magnetic layer contributes to the severe drop of TMR and the behavior of the variation of TMR with temperature different from that for Si-doping. The theoretical results can reproduce the main characteristic features of experiments.
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