Electron Transmission Through an Insulator Layer with Randomly Distributed Magnetic Impurities in Ferromagnet–Insulator–Ferromagnet Junctions

SJ Xiong,YD Yao
DOI: https://doi.org/10.1143/jjap.41.4530
IF: 1.5
2002-01-01
Japanese Journal of Applied Physics
Abstract:We investigate the effects of magnetic impurities in the insulator layer on tunnel magnetoresistance (TMR) of ferromagnet-insulator-ferromagnet junctions. The magnetic impurities are randomly distributed in the insulator layer. From a tight-binding Hamiltonian the conductance and TMR ratio are calculated. It is found that the polarization of magnetic impurities has a crucial effect on the TMR ratio. If the average polarization is zero, the TMR ratio is reduced with increasing impurity concentration, due to the spin-flip scattering. If the average polarization is non-zero, the TMR ratio may increase or change its sign with increasing impurity concentration. The obtained results are in good agreement with recent experiments.
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