The Three-Neutrino Mixing and Oscillations

S.M.Bilenky

DOI: https://doi.org/10.48550/arXiv.hep-ph/0203247

2002-03-27

Abstract:The basics of neutrino oscillations is presented. Existing evidences of neutrino oscillations, obtained in the atmospheric and solar neutrino experiments, are considered. The new CHOOZ bound on the element $|U_{e3}|^{2}$, obtained from the three-neutrino analysis of the data, is discussed. Decoupling of neutrino oscillations in the solar neutrino range of $\Delta m^{2}$ is considered.

High Energy Physics - Phenomenology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the relationship between tunnel magnetoresistance (TMR) and the electronic states at the interface of ferromagnetic tunnel junctions. In particular, how the modification of these interface electronic states by introducing magnetic impurities affects TMR. Specifically, the authors focus on the formation of virtual bound states (VBS) by magnetic impurities (such as chromium Cr) at the interface of ferromagnetic tunnel junctions and how these states significantly reduce the TMR ratio.

### Main problem decomposition:

1. **Theoretical model of TMR ratio**:
- Use the simple Julliere model to describe the TMR ratio:
\[
\text{MR ratio} = \frac{2P_L P_R}{1 + P_L P_R}
\]
where \( P_L \) and \( P_R \) are the spin polarizations of the left - and right - hand ferromagnetic electrodes respectively. Although this model can well explain the experimental results, the physical meaning of the spin polarization \( P \) is not clear enough.

2. **Influence of interface electronic states**:
- By introducing the Periodic Anderson Model (PAM) and linear response theory, the influence of magnetic impurities at the interface on the s - electron tunneling process was studied. Special attention was paid to how the position of the d - level of magnetic impurities affects s - electron tunneling, especially the change in the majority - spin state.

3. **Explanation of experimental phenomena**:
- Experiments show that the TMR ratio of ferromagnetic tunnel junctions containing chromium (Cr) impurities is significantly reduced, while ferromagnetic tunnel junctions containing copper (Cu) impurities hardly have this effect. This indicates that the density of states (DOS) of electronic states at the interface has an important influence on the TMR ratio.

4. **Comparison with giant magnetoresistance (GMR)**:
- The study also compared the influence of magnetic impurities on GMR. It was found that the reduction of the TMR ratio caused by magnetic impurities is mainly due to the blocking of s - electron tunneling, while in GMR it is due to the increase of s - electron scattering.

### Summary:
Through theoretical calculations and model analysis, this paper reveals how the virtual bound states formed by magnetic impurities at the interface of ferromagnetic tunnel junctions significantly reduce the TMR ratio and explains the phenomena observed in experiments. In addition, it also explores the similarities and differences between these effects and GMR, providing a new perspective for understanding the influence of interface electronic states on magnetoresistance.