Abstract:The latest discovery of ferromagnetism in atomically thin films of semiconductors Cr$_2$Ge$_2$Te$_6$ and CrI$_3$ has unleashed numerous opportunities for fundamental physics of magnetism in two-dimensional (2D) limit and also for technological applications based on 2D magnetic materials. In this paper, we present a comprehensive theoretical study of the magnetic, electronic, optical and magneto-optical(MO) properties of multilayers [monolayer(ML), bilayer and trilayer] and bulk CrI$_3$, based on the density functional theory with the generalized gradient approximation plus on-site Coulomb repulsion scheme. Interestingly, all the structures are found to be single-spin ferromagnetic(FM) semiconductors. They all have a large out-of-plane magnetic anisotropy energy(MAE) of $\sim$0.5 meV/Cr. These large MAEs suppress transverse spin fluctuations and thus stabilize long-range magnetic orders at finite temperatures down to the ML limit. They also exhibit strong MO effects with their Kerr and Faraday rotation angles being comparable to that of best-known bulk MO materials. The shape and position of the main features in the optical and MO spectra are found to be nearly thickness-independent although the magnitude of Kerr rotation angles increases monotonically with the film thickness. Magnetic transition temperatures estimated based on calculated exchange coupling parameters, calculated optical conductivity, MO Kerr and Faraday rotation angles agree quite well with available experimental data. The calculated MAE as well as optical and MO properties are analyzed in terms of the calculated orbital-decomposed densities of states, band state symmetries and dipole selection rules. Our findings of large out-of-plane MAEs and strong MO effects in these single-spin FM semiconducting CrI$_3$ ultrathin films suggest that they will find valuable applications in semiconductor MO and spintronic nanodevices.

Scaling Behavior of Magnetoresistance with the Layer Number in CrI3 Magnetic Tunnel Junctions

Scaling Behavior of Magnetoresistance with the Layer Number in Cr I 3 Magnetic Tunnel Junctions

Magnetism and Magneto-optical Effects in Bulk and Few-layer CrI$_3$: A Theoretical GGA + U Study

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

Layer-Dependent Giant Magnetoresistance in Two-Dimensional Cr PS 4 Magnetic Tunnel Junctions

Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1 T-CrTe2 Electrodes

Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li 0.5 CrI 3 and CrI 3

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin-filtering effects and high tunnel magnetoresistance via energy band difference

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction*

Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions

Layer-Dependent Magnetoresistance and Spin-Transfer Torque in MnSe2-Based Magnetic Tunnel Junctions

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few-layer CrPS4

Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to Device

Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Large Tunneling Magnetoresistance in Van Der Waals Magnetic Tunnel Junctions Based on FeCl2 Films with Interlayer Antiferromagnetic Couplings.