Abstract:Magnetic tunnel junctions (MTJs) with ferromagnetic (FM) and/or antiferromagnetic (AFM) materials have attracted wide interest for their promising application in spintronic devices. Recently, many discovered two-dimensional (2D) magnetic materials offer a flexible platform to design switchable layered FM/AFM MTJs. By using the first-principles quantum transport simulations, we designed the MTJs based on 2D van der Waals layered MnBi _2 Te _4 and studied the spin-dependent electronic and transport properties of the MTJs with the different thickness MnBi _2 Te _4 as well as their FM and AFM configurations. As the increment of MnBi _2 Te _4 layers, our results show that there is a higher spin polarization and the tunnel magnetoresistance (TMR) ratio at the Fermi level correspondingly increases: 100 _2 Te _4 -based MTJs. For Moore’s Law to continue to work, there is an urgent demand to find new principles, new materials, and more concepts for future devices. Among them, spintronics has exhibited great potential due to its excellent performance. A typical widely used device is the magnetic tunnel junction (MTJ) in spintronics. Recently, more and more MTJs based on discovered two-dimensional magnetic materials have been predicted with higher tunnel magnetoresistance (TMR). As the first magnetic topological materials, MnBi2Te4 hold various magnetic states and thickness-dependent properties rather than single ferromagnetic states, and there are more possibilities to design versatile MTJ devices. Here, we construct the magnetic tunnel junctions based on MnBi2Te4 with Cu as the electrode: Cu/n-Layer-MnBi2Te4/Cu (n = 1, 2, 3, 4) device. Based on density functional theory and nonequilibrium Green’s function, we found that with the thickening of the MnBi2Te4 layers, the spin filtering of MnBi2Te4 is more apparent, where the TMR value at the Fermi level is 100 Schematic view of MnBi2Te4-based device model. The maximum tunnel magnetoresistance (TMR) ratio and the TMR ratio at the Fermi level in Cu/2(4)L-MBT/Cu magnetic tunnel junctions without and with spin–orbit coupling.

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Current-driven magnetic resistance in van der Waals spin-filter antiferromagnetic tunnel junctions with MnBi$_2$Te$_4$

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Tunable sliding ferroelectricity and magnetoelectric coupling in two-dimensional multiferroic MnSe materials

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Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

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