Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Yipeng An,Kun Wang,Shijing Gong,Yusheng Hou,Chunlan Ma,Mingfu Zhu,Chuanxi Zhao,Tianxing Wang,Shuhong Ma,Heyan Wang,Ruqian Wu,Wuming Liu

DOI: https://doi.org/10.1038/s41524-021-00513-9

IF: 12.256

2021-03-31

npj Computational Materials

Abstract:Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi 2 Te 4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn -junction diodes and sub-3-nm pin -junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip - and nin -junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

materials science, multidisciplinary,chemistry, physical

What problem does this paper attempt to address?

This paper aims to explore the nanodevice design based on MnBi₂Te₄ monolayer (MBT - ML) and its spin - dependent transport properties. Specifically, the researchers designed several conceptual nanodevices and revealed the spin - dependent transport properties of these devices through first - principles calculations. The main focuses include:

1. **pn - junction diode**: The spin - dependent transport properties of the pn - junction diode of MBT - ML were studied. It was found that it has a strong rectification effect and spin - filtering effect, and the ideality factor \(n\) is close to 1, even at relatively high temperatures.

2. **Field - effect transistors (FETs)**: Sub - 3 - nm pin - junction field - effect transistors were designed, showing similar rectification and spin - filtering effects. The gate voltage can significantly regulate the current passing through these FETs, achieving the switching function. In addition, pip - and nin - junction FETs also exhibit interesting negative differential resistance (NDR) effects and excellent spin - filtering effects.

3. **Optoelectronic properties**: The photoconductive properties of MBT - ML and its potential applications in spintronics were explored. Research shows that MBT - ML has a large photoconductivity in the visible light region. In particular, the Z - type pin - junction phototransistor has the strongest response to yellow light and can be used in optoelectronic devices.

In summary, this paper reveals the versatility and application potential of MBT - ML in the fields of spintronics and optoelectronics by designing and simulating a variety of nanodevices based on it.