Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions

Zhi Yan,Dan Qiao,Wentian Lu,Xinlong Dong,Xiaohong Xu

2024-08-03

Abstract:Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the electronic transport properties of antiferromagnetic-multiferroic tunnel junction (AMFTJ) devices remains largely unexplored. Here, we design an antiferromagnet/ferroelectric barrier/antiferromagnet van der Waals heterojunction, renamed vdW AMFTJ, using a bilayer MnBi$_2$Te$_4$/In$_2$Se$_3$/bilayer MnBi$_2$Te$_4$ (MBT-2L/IS/MBT-2L) as the prototype. Based on first-principles calculations using the nonequilibrium Green's function method combined with density functional theory, we theoretically investigate the spin-resolved electronic transport properties of this AMFTJ. By manipulating the various possible magnetization directions of the multilayer antiferromagnetic MnBi$_2$Te$_4$ and the ferroelectric polarization direction of the In$_2$Se$_3$ within the junction, sixteen distinct non-volatile resistance states can be revealed and manipulated by applying external biaxial strain and bias voltage. We predict maximum tunneling magnetoresistance (electroresistance) values of $3.79\times10^{4}$\% ($2.41\times10^{5}$\%) in the equilibrium state, which can increase up to $5.01\times10^{5}$\% ($4.97\times10^{5}$\%) under external bias voltage. Furthermore, the perfect spin filtering effect is also present in our AMFTJ. Our results highlight the tremendous potential of the MBT-2L/IS/MBT-2L vdW AMFTJ in non-volatile memory, expanding the application avenues for antiferromagnetic spintronic devices.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the electron - transport properties of two - dimensional van der Waals antiferromagnetic - multiferroic tunnel junctions (vdW AMFTJ). In particular, by manipulating the magnetization direction of the multilayer antiferromagnetic MnBi2Te4 and the polarization direction of the In2Se3 ferroelectric barrier, the non - volatile resistance states in these devices are revealed and controlled. The goal of the paper is to design a vdW AMFTJ based on a bilayer MnBi2Te4/In2Se3/bilayer MnBi2Te4 (MBT - 2L/IS/MBT - 2L) structure and study its spin - resolved electron - transport properties using first - principles calculations combined with the non - equilibrium Green's function method. Specifically, the paper aims to:

1. **Reveal and control non - volatile resistance states**: Through the application of external biaxial strain and bias voltage, 16 different non - volatile resistance states can be revealed and manipulated.
2. **Predict high tunneling magnetoresistance (TMR) and electro - resistance (TER) values**: In the equilibrium state, the predicted maximum TMR and TER values are 3.79×10^4% and 2.41×10^5% respectively, while under an external bias voltage, these values can be increased to 5.01×10^5% and 4.97×10^5% respectively.
3. **Achieve a perfect spin - filtering effect**: Under a specific magnetic configuration and a finite bias voltage, a perfect spin - filtering effect is observed.
4. **Optimize electron - transport performance**: Through external bias voltage and biaxial strain, the electron - transport performance of AMFTJ is flexibly adjusted to achieve higher TMR and TER values, as well as a more effective spin - filtering effect.

Through these studies, this paper provides key insights for the design and optimization of next - generation high - speed, low - power spintronic devices, and is of particular significance for non - volatile memory applications.