Abstract:Van der Waals multiferroic tunnel junctions (vdW-MFTJs) are promising candidates for data storage devices due to their tunable thickness and capability to exhibit multiple nonvolatile resistance states. However, existing vdW-MFTJs utilize ferroelectricity and ferromagnetism independently, failing to achieve true magnetoelectric coupling, which leads to unnecessary energy dissipation. Here, we propose an innovative vdW-MFTJ design based on a CrBr$_3$/MnPSe$_3$/CrBr$_3$ vertical heterostructure, enabling genuine magnetoelectric coupling without relying on atomic migration induced by inversion symmetry breaking for ferroelectric polarization reversal. Using first-principles calculations, we investigate the spin-polarized quantum transport properties of the proposed structure. By integrating asymmetric PtTe$_2$/alkali-metal (Li/Na/K)-doped/intercalated CrBr$_3$ electrodes, the device demonstrates exceptional performance, with a maximum tunneling magnetoresistance (TMR) exceeding $8.1\times10^5$\% and tunneling electroresistance (TER) reaching 2499\%, while the spin-filtering channels can be flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias voltage range. Applying an external bias voltage further enhances these metrics, increasing TMR to $3.6\times 10^7$\% and TER to 9990\%. Notably, a pronounced negative differential resistance (NDR) effect is observed, yielding an unprecedented peak-to-valley ratio (PVR) of $9.55\times10^9$\%, the highest value reported to date. These extraordinary characteristics highlight the potential of vdW-MFTJs for ultra-efficient electronic switching, a key feature for next-generation spintronic devices. Our findings provide a solid theoretical foundation for designing and developing high-performance magnetic storage and logic technologies.

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A novel magnetic tunnel junction fabricated by robust intrinsic van der Waals half-metals

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

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Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin-filtering effects and high tunnel magnetoresistance via energy band difference

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Tunable Tunneling Magnetoresistance In Van Der Waals Magnetic Tunnel Junctions With 1t-Crte2 Electrodes

Giant Tunnel Magnetoresistance in In-Plane Magnetic Tunnel Junctions Based on the Heterointerface-Induced Half-Metallic 2H-VS2

Excellent spin-filtering and giant tunneling magnetoresistance in a dual-electrode van der Waals magnetic tunnel junction based on ferromagnetic CrSe2

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Designing High Tunnel Magnetoresistance van der Waals Magnetic Tunnel Junction via Brillouin Zone Filtering

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Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Giant Tunneling Magnetoresistance in Two-Dimensional Magnetic Tunnel Junctions Based on Double Transition Metal MXene ScCr2C2F2

Ultrahigh tunneling magnetoresistance ratios in the sandwich-structured full MXene Cr2NO2/Ti2CO2/Cr2NO2 van der Waals heterojunction

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Genuine and Robust Magnetoelectric Coupling Effect in van der Waals Multiferroic Tunnel Junctions

Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on Van Der Waals A-Type Antiferromagnet CrSBr