Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Xiaolin Zhang,Baishun Yang,Xiaoyan Guo,Xiufeng Han,Yu Yan

DOI: https://doi.org/10.1039/d1nr04692f

IF: 6.7

2021-01-01

Nanoscale

Abstract:Schematics of TMR effect of FGT/CrI 3 /FGT and FGT/ScI 3 /FGT vdW MTJs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

A novel magnetic tunnel junction fabricated by robust intrinsic van der Waals half-metals

Duo Zhao,Mingming Wei,Feng Yang,Wei-xiao Ji,Jianguo Lu,Yu-Jia Zeng,Xiaopeng Yang

DOI: https://doi.org/10.1016/j.surfin.2022.102293

IF: 6.2

2022-01-01

Surfaces and Interfaces

Abstract:Two-dimensional magnetic van der Waals materials (vdW) have attracted considerable attentions in recent years due to their emerging physical properties and great potential application to the spintronics devices. Magnetic tunnel junction (MTJ) is one of the most important devices in spintronics. However, many unknown mechanisms governing its critical performance remain to be elucidated. Here, based on first-principles calculations, vdW materials VBr3 and VCl3 are shown to be the robust intrinsic half-metals with spin down electron's energy gap about 3.3 eV, and the Fermi level is almost located at the center of the spin down electron's energy gap. Based on this, we predict that application of VBr3 to the magnetic electrodes of MTJ would greatly improve the off/on ratio of junction resistance. Moreover, the coercivity of magnetic electrodes used by vdW material VBr3 can be tuned by the number of layers, and an antiferromagnetic layer pinning the ferromagnetic electrode can be omission. This provides a reliable way to study and design the MTJ devices in the future.
Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li 0.5 CrI 3 and CrI 3

Fangfang Li,Baishun Yang,Yu Zhu,Xiufeng Han,Yu Yan

DOI: https://doi.org/10.1063/5.0013951

IF: 4

2020-07-13

Applied Physics Letters

Abstract:Two-dimensional (2D) intrinsic magnets have been used to construct magnetic tunnel junctions (MTJs) with a high tunneling magnetoresistance (TMR) ratio, including van der Waals (vdW) MTJs and lateral MTJs. In this work, we design vdW and lateral MTJs formed by a ferromagnetic (FM) CrI3 barrier and two half-metallic Li0.5CrI3 electrodes, respectively, and investigate the TMR effect of these MTJs using the non-equilibrium Green's function combined with density functional theory. Interestingly, it is found that due to the half-metallicity of the Li0.5CrI3 electrode, the total conductances of vdW and lateral MTJs for the parallel configuration (PC) of magnetizations of two electrodes are about 12 and 11 orders of magnitude larger than those for the antiparallel configuration (APC) of magnetizations of two electrodes, respectively. Consequently, the ultrahigh TMR ratios of up to 1.48 × 1014 and 2.86 × 1012 are achieved in the designed vdW and lateral MTJs, respectively. Remarkably, the TMR ratio of 1.48 × 1014 is the highest ratio in MTJs based on 2D materials. Moreover, due to the CrI3 barrier in vdW MTJs becoming FM half-metal, the majority-spin conductance of vdW MTJs for PC of magnetizations of two electrodes is about 2 orders of magnitude larger than that of lateral MTJs, and thus, the TMR ratio of vdW MTJs is about 2 orders of magnitude larger than that of lateral MTJs. Our results suggest that vdW and lateral MTJs formed by the FM CrI3 barrier and half-metallic Li0.5CrI3 electrodes hold great potential for applications in spintronic devices.

physics, applied
Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Hua Bai,Xinyi Li,Hui Pan,Pimo He,Zhu-an Xu,Yunhao Lu

DOI: https://doi.org/10.1021/acsami.1c18949

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Magnetic tunnel junctions (MTJs), ferroelectric/antiferroelectric tunnel junctions (FTJs/AFTJs), and multiferroic tunnel junctions (MFTJs) have recently attracted significant interest for technological applications of nanoscale memory devices. Until now, most of them are based on perovskite oxide heterostructures with a relatively high resistance-area (RA) product and low resistance difference unfavorable for practical applications. The recent discovery of the two-dimensional (2D) van der Waals (vdW) ferroelectric (FE) and magnetic materials has opened a new route to realize tunnel junctions with high performance and atomic-scale dimensions. Here, using first-principles calculations, we propose a new type of 2D tunnel junction: an antiferroelectric magnetic tunnel junction (AFMTJ), which inherits the features of both MTJ and AFTJ. This AFMTJ is composed of monolayer CuInP2S6 (CIPS) sandwiched between 2D magnetic electrodes of CrSe2. The AFTJ with nonmagnetic electrodes of TiSe2 on both sides of CIPS and the asymmetric AFTJ with both CrSe2 and TiSe2 electrodes are also investigated. Based on quantum-mechanical modeling of the electronic transport, sizeable tunneling electroresistance effects and multiple nonvolatile resistance states are demonstrated. More importantly, a remarkably low RA product (less than 0.1 Ω·μm2) makes the proposed vdW AFMTJs superior to the conventional MFTJs in terms of their promising nonvolatile memory applications. Our calculations provide new guidance for the experiment and application of nanoscale memory devices.
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions

Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang

DOI: https://doi.org/10.1038/s41467-023-41077-0

IF: 16.6

2023-09-04

Nature Communications

Abstract:Abstract Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe 3 GeTe 2 /GaSe/Fe 3 GeTe 2 MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the MTJs offers energy-band-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not only the magnitude of the TMR is tuned by the semiconductor thickness but also the TMR sign can be reversed by varying the bias voltages, enabling modulation of highly spin-polarized carriers in vdW semiconductors.

multidisciplinary sciences
Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1 T-CrTe2 Electrodes

Hangyu Zhou,Youguang Zhang,Weisheng Zhao

DOI: https://doi.org/10.1021/acsami.0c17829

2021-01-13

Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures have opened new avenues for spintronic applications with novel properties. Here, by density functional theory calculations, we investigated the spin-dependent transport in vdW magnetic tunnel junctions (MTJs) composed of 1T-CrTe2 ferromagnetic electrodes. Meanwhile, graphene and h-BN are employed as tunnel barriers. It has been found that the tunneling magnetoresistance (TMR) effects of two types of vdW MTJs present analogous trends: thicknesses of barriers have a great influence on the TMR ratios, which reach up to the maximum when barriers increase to five monolayers. However, despite the similarity, the graphene-barrier junction is more promising for optimization. Through observing the energy-resolved transmission spectra of vdW MTJs, we noticed that TMR ratios of graphene-barrier junctions are tunable and could be enhanced through tuning the position of Fermi energy. Therefore, we successfully realized the TMR optimization by substitutional doping. When substituting one carbon atom with one boron atom in the graphene barrier, TMR ratios are drastically improved, and a TMR ratio as high as 6962% could be obtained in the doped seven-monolayer-barrier junction. Our results pave the way for vdW MTJ applications in spintronics.
Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Kartik Samanta,Yuan-Yuan Jiang,Tula R. Paudel,Ding-Fu Shao,Evgeny Y. Tsymbal

2023-10-03

Abstract:Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional property is tunneling magnetoresistance (TMR) that is a change in MTJ's resistance when magnetization of the two electrodes alters from parallel to antiparallel. Here, we demonstrate that TMR can occur in MTJs with a single FM electrode, provided that the counter electrode is an antiferromagnetic (AFM) metal that supports a spin-split band structure and/or a Néel spin current. Using RuO$_{2}$ as a representative example of such antiferromagnet and CrO$_{2}$ as a FM metal, we design all-rutile RuO$_{2}$/TiO$_{2}$/CrO$_{2}$ MTJs to reveal a non-vanishing TMR. Our first-principles calculations predict that magnetization reversal in CrO$_{2}$ significantly changes conductance of the MTJs stacked in the (110) or (001) planes. The predicted giant TMR effect of about 1000% in the (110) oriented MTJs stems from spin-dependent conduction channels in CrO$_{2}$ (110) and RuO$_{2}$ (110), whose matching alters with CrO$_{2}$ magnetization orientation, while TMR in the (001) oriented MTJs originates from the Néel spin currents and different effective TiO$_{2}$ barrier thickness for the two magnetic sublattices that can be engineered by the alternating deposition of TiO$_{2}$ and CrO$_{2}$ monolayers. Our results demonstrate a possibility of a sizable TMR in MTJs with a single FM electrode and offer a practical test for using the altermagnet RuO$_{2}$ in functional spintronic devices.

Materials Science,Applied Physics
Giant Tunneling Magnetoresistance and Electroresistance in Α−in2se3 -Based Van Der Waals Multiferroic Tunnel Junctions

Zhi Yan,Zeyu Li,Yulei Han,Zhenhua Qiao,Xiaohong Xu

DOI: https://doi.org/10.1103/physrevb.105.075423

2022-01-01

Abstract:In the multiferroic tunnel junction (MFTJ) composed of ferromagnetic and ferroelectric materials, the tunneling electroresistance (TER) coexists with the tunneling magnetoresistance (TMR), making it an ideal platform for designing multifunctional electronic devices. Recently, the rapid development of van der Waals (vdW) materials opened up a new avenue of MFTJ due to their atomic thickness and signiﬁcance in miniaturizing device sizes. Here by employing the nonequilibrium Green’s function combined with density-functional theory, we systemically study the spin-dependent electronic transport properties of Fe 3 GeTe 2 (FGT)/bilayer α -In 2 Se 3 (BIS)/FGT vdW MFTJs. We ﬁnd that the MFTJ can form multiple nonvolatile resistance states by altering the polarization orientation of the ferroelectric barrier BIS and the magnetization alignment of the two ferromagnetic FGT electrodes, with a maximum TMR (TER) ratio up to 1 . 1 × 10 7 % (744%). The TER ratio can be further increased to 1868% by using left and right symmetrical copper electrodes. More interestingly, the perfect spin ﬁltering effect can be realized in our MFTJs and the spin current can be controlled by the sign of bias voltages, suggesting a promising route for spin valves that can ﬂexibly manipulate spin currents. Our results demonstrate that giant TMR, large TER, as well as a tunable spin ﬁlter can coexist in one system, and that the feasible tunability of such kind of vdW MFTJs is beneﬁcial in designing next-generation logic and memory devices.
Giant tunneling magnetoresistance and electroresistance in α − In 2 Se 3 -based van der Waals multiferroic tunnel junctions

Zhi Yan,Zeyu Li,Yulei Han,Zhenhua Qiao,Xiaohong Xu

DOI: https://doi.org/10.1103/physrevb.105.075423

IF: 3.7

2022-02-23

Physical Review B

Abstract:In the multiferroic tunnel junction (MFTJ) composed of ferromagnetic and ferroelectric materials, the tunneling electroresistance (TER) coexists with the tunneling magnetoresistance (TMR), making it an ideal platform for designing multifunctional electronic devices. Recently, the rapid development of van der Waals (vdW) materials opened up a new avenue of MFTJ due to their atomic thickness and significance in miniaturizing device sizes. Here by employing the nonequilibrium Green's function combined with density-functional theory, we systemically study the spin-dependent electronic transport properties of Fe3GeTe2 (FGT)/bilayer α-In2Se3 (BIS)/FGT vdW MFTJs. We find that the MFTJ can form multiple nonvolatile resistance states by altering the polarization orientation of the ferroelectric barrier BIS and the magnetization alignment of the two ferromagnetic FGT electrodes, with a maximum TMR (TER) ratio up to 1.1×107% (744%). The TER ratio can be further increased to 1868% by using left and right symmetrical copper electrodes. More interestingly, the perfect spin filtering effect can be realized in our MFTJs and the spin current can be controlled by the sign of bias voltages, suggesting a promising route for spin valves that can flexibly manipulate spin currents. Our results demonstrate that giant TMR, large TER, as well as a tunable spin filter can coexist in one system, and that the feasible tunability of such kind of vdW MFTJs is beneficial in designing next-generation logic and memory devices.

physics, condensed matter, applied,materials science, multidisciplinary
Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Wen Jin,Xinlu Li,Gaojie Zhang,Hao Wu,Xiaokun Wen,Li Yang,Jie Yu,Bichen Xiao,Wenfeng Zhang,Jia Zhang,Haixin Chang

2024-01-30

Abstract:Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with atomic-scale flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, yet is only restricted to ferromagnets. Here, we report A-type antiferromagnetism in 2D vdW single-crystal (Fe0.8Co0.2)3GaTe2 with TN~203 K in bulk and ~185 K in 9-nm nanosheets. The metallic nature and out-of-plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, we obtain a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature and the TMR retains at near-room temperature 280 K. Moreover, the TMR is tunable by the electric field down to 1 mV, implying the potential in energy-efficient spintronic devices. Our work provides new opportunities for 2D antiferromagnetic spintronics and quantum devices.

Materials Science
Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Xiaoyan Guo,Baishun Yang,Xiaolin Zhang,Yu Zhu,Xiufeng Han,Yu Yan

DOI: https://doi.org/10.1103/physrevb.104.144423

IF: 3.7

2021-10-25

Physical Review B

Abstract:Spin-filter van der Waals Magnetic tunnel junctions (sf-vdW MTJs) formed by an interlayer antiferromagnetic (AFM) vdW semiconductor as a barrier have exhibited promising prospects in achieving a high tunneling magnetoresistance (TMR) ratio in MTJs. Here, using first-principles calculations, we investigate the spin-dependent transport and the TMR effect of sf-vdW MTJs formed by sandwiching bilayer and trilayer NiBr2 barriers between two graphite electrodes (Gr/NiBr2/Gr sf-vdW MTJs). Similar to the experimental results of sf-vdW MTJs formed by a few-layer CrI3 barrier, the TMR ratios of the Gr/NiBr2/Gr sf-vdW MTJs increase first with the increase of bias voltage and decrease with the further increase of bias voltage after reaching the highest points because the conduction bands of the interlayer ferromagnetic (FM) NiBr2 barrier at the K points go into the bias window earlier than those of the interlayer AFM NiBr2 barrier with the increase of bias voltage. Compared to the TMR ratios of about 170% and 206% at zero bias voltage, the TMR ratios of the Gr/NiBr2/Gr sf-vdW MTJs with bilayer and trilayer NiBr2 barriers are largely increased about 34 and 67 times by the optimized bias voltage, respectively. Correspondingly, a giant TMR ratio of about 6000% and 14 000% can be achieved in the Gr/NiBr2/Gr sf-vdW MTJs with bilayer and trilayer NiBr2 barriers at 0.14 and 0.125 V bias voltage, respectively. Our results elucidate the mechanism of bias voltage induced giant TMR ratio in the Gr/NiBr2/Gr sf-vdW MTJs and provide promising routes for developing MTJs with a high TMR ratio.

physics, condensed matter, applied,materials science, multidisciplinary
Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin-filtering effects and high tunnel magnetoresistance via energy band difference

Qijun Huang,Jin He,Hao Wang,Sheng Chang,Li Liu,Shizhuo Ye

DOI: https://doi.org/10.1088/1361-6641/ac3639

IF: 2.048

2021-11-03

Semiconductor Science and Technology

Abstract:Recently, the study of two-dimensional materials has expanded to the field of spintronics. Intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 have received much attention due to their nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design magnetic tunnel junctions (MTJs) of Cu/CrI3/Cu and Cu/CrBr3/Cu with electrodes of Cu(111) and a tunneling barrier of four-monolayer CrI3 or CrBr3. Our first-principle calculations combined with non-equilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin-filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that a negative differential resistance effect is observed in the CrBr3-based MTJ. The differences in spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the physics inside the device, including the spin-dependent density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJs.

Physics,Materials Science
Designing High Tunnel Magnetoresistance van der Waals Magnetic Tunnel Junction via Brillouin Zone Filtering

Kun Li,Yuzheng Guo,John Robertson,Weisheng Zhao,Haichang Lu

DOI: https://doi.org/10.1039/d4nr02717e

IF: 6.7

2024-09-09

Nanoscale

Abstract:Magnetic tunnel junctions (MTJ) consisting of two-dimensional (2D) van der Waals heterostructures have no inter-layer chemical bonds, so their spin tunneling is determined solely by the Brillouin zone (BZ) filtering effect. To obtain high tunnel magnetoresistance (TMR), they should possess transversal momentum-resolved conduction channels for the electrodes and transmission channels for the barriers. Here, we investigate 2D magnets as electrodes whose Curie temperatures approach room temperature and also hexagonal 2D insulators as the barrier. Iron-based compounds such as FexGeTe2 (x=3,4) are calculated to have high transmission coefficients over the entire in-plane BZ for the majority spin channel while this should only happen around Γ for the minority spin channel. Correspondingly, various 2H-type transition metal dichalcogenides (TMDs) are found to function effectively as spin barriers, where electrons are only allowed to tunnel through them around the K and M points. The BZ spin filtering is confirmed to be the major mechanism of the TMR effect by the MTJ transport calculation using the non-equilibrium Green function method. Furthermore, the TMR is calculated to be nearly independent of barrier layer thickness as the BZ filtering is an interfacial effect. This work sheds light on material selection procedures and to design ultra-thin and robust van der Waals MTJ.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to Device

Xiaolei Ma,Jiezhi Chen,Kaiyou Wang,Runsheng Wang,Ru Huang

DOI: https://doi.org/10.1109/iedm19574.2021.9720574

2021-01-01

Abstract:Based on density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism, the magnetic tunnel junctions (MTJs) with 2D tunneling barrier (TB) material are systematically simulated from the material level to the device level. The magnetic properties of ferromagnetic metal (FM), spin-orbit coupling (SOC) of 2D TB, tunneling magnetoresistance (TMR) and I-V characteristics of MTJs are thoroughly studied. The effects of TB doping and interfacial layer (IL) engineering are discussed. We pointed out for the first time that 2D FM Fe3FeTe2 (FGT) and 2D semiconductors contacts can form good $n$-type contacts with lower Schottky barrier (SBH), especially the SBH is almost zero in FGT-InSe interface. More importantly, for the first time, it is found that each layer of FGT shows obvious perpendicular magnetic anisotropy (PMA) in FGT|WSe2|FGT MTJ, which means that each layer of FGT used in MTJs contributes to the total MAE. On the other hand, MTJs using FGT can effectively suppress the minority-spin-transport channel and thus significantly improve TMR. In addition, graphene IL, TB doping and different TB layers are examined to further modulate TMR.
Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su

DOI: https://doi.org/10.1021/acs.nanolett.9b01506

2019-04-12

Abstract:Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel. Such a giant tunneling magnetoresistance (TMR) effect is driven by dissimilar electronic structure of the two spin-conducting channels in Fe3GeTe2, resulting in a mismatch between the incoming and outgoing Bloch states in the electrodes and thus suppressed transmission for an antiparallel-aligned MTJ. The vdW bounding between electrodes and a spacer layer makes this result virtually independent of the type of the spacer layer, making the predicted giant TMR effect robust with respect to strain, lattice mismatch, interface distance and other parameters which may vary in the experiment. We hope that our results will further stimulate experimental studies of vdW MTJs and pave the way for their applications in spintronics.

Materials Science
Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces

Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang

DOI: https://doi.org/10.1063/5.0136180

IF: 4

2023-02-26

Applied Physics Letters

Abstract:Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe 3 GaTe 2 , which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe 3 GaTe 2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe 3 GaTe 2 /insulator/Fe 3 GaTe 2 by using first-principles calculations. It is found that Fe 3 GaTe 2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlO x and MgO-based MTJs. Our results suggest that Fe 3 GaTe 2 -based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

physics, applied
Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction.

Xiangyu Zeng,Ge Ye,Fazhi Yang,Qikai Ye,Liang Zhang,Boyang Ma,Yulu Liu,Mengwei Xie,Genquan Han,Yue Hao,Jikui Luo,Xin Lu,Yan Liu,Xiaozhi Wang

DOI: https://doi.org/10.1021/acsami.3c15363

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer's superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics' properties and the achievement of spin-based integrated circuits.
Large Tunneling Magnetoresistance in Van Der Waals Magnetic Tunnel Junctions Based on FeCl2 Films with Interlayer Antiferromagnetic Couplings.

Jiangchao Han

DOI: https://doi.org/10.1039/d2nr05684d

IF: 6.7

2023-01-01

Nanoscale

Abstract:Antiferromagnets (AFMs) are some of the most promising candidates for next-generation magnetic memory technology owing to their advantages over conventional ferromagnets (FMs), such as zero stray field and THz-range magnetic resonance frequency. Motivated by the recent synthesis of FeCl2 films with interlayer AFM and intralayer FM couplings, we investigated the magnetic properties of few-layer FeCl2 and the spin-dependent transmissions of graphite/bilayer FeCl2/graphite and Au/n-layer FeCl2/Au magnetic tunnel junctions (MTJs) using first-principles calculations combined with the nonequilibrium Green's function. The interlayer AFM coupling of FeCl2 is certified to be stable and independent of the stacking orders and relative displacement between layers. Furthermore, based on the Au electrode with better conductive performance than the graphite electrode and monolayer 1T-FeCl2 with complete spin polarization, high Curie temperature and large magnetic anisotropic energy, a high tunnel magnetoresistance (TMR) ratio of 2.7 × 103% is achieved in Au/bilayer FeCl2/Au MTJs at zero bias and it increases with different layers of FeCl2 (n = 2-10). These excellent spin transport properties of Au/n-layer FeCl2/Au MTJs based on two-dimensional (2D) AFM barriers with out-of-plane magnetization directions suggest their great potential for application in high-reliability, high-speed and high-density spintronic devices.
Proximity Effect-Induced Magnetoresistance Enhancement in a Fe 3 GeTe 2 /NbSe 2 /Fe 3 GeTe 2 Magnetic Tunnel Junction

Xiangyu Zeng,Ge Ye,Fazhi Yang,Qikai Ye,Liang Zhang,Boyang Ma,Yulu Liu,Mengwei Xie,Genquan Han,Yue Hao,Jikui Luo,Xin Lu,Yan Liu,Xiaozhi Wang

DOI: https://doi.org/10.1021/acsami.3c15363

IF: 9.5

2023-12-06

ACS Applied Materials & Interfaces

Abstract:The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe(3)GeTe(2) (FGT)/NbSe(2)/FGT near the NbSe(2) layer's superconducting critical temperature (T(C)) of 6.8 K. This enhancement is attributed...

materials science, multidisciplinary,nanoscience & nanotechnology
Giant tunneling magnetoresistance and quantum interference effect in ferromagnet/ferromagnet/s-wave superconductor junctions

Qiang Cheng,Biao Jin

DOI: https://doi.org/10.1016/j.physc.2011.11.011

2012-01-01

Abstract:We study the tunneling magnetoresistance (TMR) effect in asymmetric ferromagnet/ferromagnet/s-wave superconductor junctions based on the extended Blonder-Tinkham-Klapwijk theory. When the left ferromagnet (FM) is in the half-metallic limit, the low-energy charge transport in this system is governed by the so-called same-spin-band Andreev reflection, where the incident electron and the Andreev reflected hole belong to the same spin subband. It is demonstrated that the same-spin-band Andreev reflection depends sensitively on the relative orientation of the magnetizations in the two FMs leading to giant TMR effect (TMR > 10 6% for T/T c ≪ 1). Distinctive oscillatory variation of TMR with the thickness or the spin polarization of the intermediate FM is also found. © 2011 Elsevier B.V. All rights reserved.

Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

A novel magnetic tunnel junction fabricated by robust intrinsic van der Waals half-metals

Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li 0.5 CrI 3 and CrI 3

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions

Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1 T-CrTe2 Electrodes

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Giant Tunneling Magnetoresistance and Electroresistance in Α−in2se3 -Based Van Der Waals Multiferroic Tunnel Junctions

Giant tunneling magnetoresistance and electroresistance in α − In 2 Se 3 -based van der Waals multiferroic tunnel junctions

Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin-filtering effects and high tunnel magnetoresistance via energy band difference

Designing High Tunnel Magnetoresistance van der Waals Magnetic Tunnel Junction via Brillouin Zone Filtering

Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to Device

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction.

Large Tunneling Magnetoresistance in Van Der Waals Magnetic Tunnel Junctions Based on FeCl2 Films with Interlayer Antiferromagnetic Couplings.

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe 3 GeTe 2 /NbSe 2 /Fe 3 GeTe 2 Magnetic Tunnel Junction

Giant tunneling magnetoresistance and quantum interference effect in ferromagnet/ferromagnet/s-wave superconductor junctions