Proximity Effect-Induced Magnetoresistance Enhancement in a Fe 3 GeTe 2 /NbSe 2 /Fe 3 GeTe 2 Magnetic Tunnel Junction

Xiangyu Zeng,Ge Ye,Fazhi Yang,Qikai Ye,Liang Zhang,Boyang Ma,Yulu Liu,Mengwei Xie,Genquan Han,Yue Hao,Jikui Luo,Xin Lu,Yan Liu,Xiaozhi Wang
DOI: https://doi.org/10.1021/acsami.3c15363
IF: 9.5
2023-12-06
ACS Applied Materials & Interfaces
Abstract:The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe(3)GeTe(2) (FGT)/NbSe(2)/FGT near the NbSe(2) layer's superconducting critical temperature (T(C)) of 6.8 K. This enhancement is attributed...
materials science, multidisciplinary,nanoscience & nanotechnology
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