Abstract:Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van der Waals heterostructures with sharp and clean interfaces at the atomic scale are crucial for applications in nanoscale multi-resistive logic memory devices. The recently discovered sliding ferroelectricity in 2D van der Waals materials has opened new avenues for ferroelectric-based devices. Here, we theoretically investigate the spin-dependent electronic transport properties of Fe$_3$GeTe$_2$/graphene/bilayer-$h$-BN/graphene/CrI$_3$ (FGT/Gr-BBN-Gr/CrI) all-vdW MFTJs by employing the nonequilibrium Green's function combined with density functional theory. We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJs exhibit four non-volatile resistance states associated with different staking orders of sliding ferroelectric BBN and magnetization alignment of ferromagnetic free layer CrI$_3$, with a maximum tunnel magnetoresistance (electroresistance) ratio, i.e., TMR (TER) up to $\sim$$3.36\times10^{4}$\% ($\sim$$6.68\times10^{3}$\%) at a specific bias voltage. Furthermore, the perfect spin filtering and remarkable negative differential resistance effects are evident in our MFTJs. We further discover that the TMR, TER, and spin polarization ratio under an equilibrium state can be enhanced by the application of in-plane biaxial strain. This work shows that the giant tunneling resistance ratio, multiple resistance states, and excellent spin-polarized transport properties of sliding ferroelectric BBN-based MFTJs indicate its significant potential in nonvolatile memories.

What problem does this paper attempt to address?

This paper aims to solve the following problems: With the continuous growth of the demand for faster, smaller and non - volatile electronic devices, traditional silicon - based semiconductor devices are being pushed to smaller sizes. However, power consumption and the finite - size effect become limiting factors for device miniaturization. In this context, this paper studies multiferroic tunnel junctions (MFTJs) based on two - dimensional (2D) van der Waals heterostructures. These structures have sharp and clean interfaces at the atomic scale and are crucial for the application of nano - scale multi - resistance - state logic memories. In particular, the recently discovered sliding ferroelectricity in 2D van der Waals materials has opened up new avenues for ferroelectric - based devices. In this paper, the spin - dependent electron transport properties of the Fe_3GeTe_2/graphene/bilayer h - BN/graphene/CrI_3 (FGT/Gr - BBN - Gr/CrI) all - van der Waals MFTJ are theoretically studied by combining the non - equilibrium Green's function and density functional theory. Specifically, this study shows that this FGT/Gr - BBN - Gr/CrI MFTJ exhibits four non - volatile resistance states related to different stacking orders of the sliding ferroelectric BBN and the magnetization arrangement of the free - layer CrI_3. The maximum tunneling magnetoresistance (electrical resistance) ratio, i.e., TMR (TER), can reach approximately 3.36×10^4% (6.68×10^3%) at a specific bias voltage. In addition, a perfect spin - filtering effect and a significant negative differential resistance effect are also observed. The study further finds that the TMR, TER and spin - polarization ratio in the equilibrium state can be enhanced by applying in - plane biaxial strain. In summary, by studying the large tunneling resistance ratio, multiple resistance states and excellent spin - polarized transport properties of the MFTJ based on the sliding ferroelectric BBN in non - volatile storage, this paper highlights its great potential in the field of non - volatile storage.

Voltage-tunable giant nonvolatile multiple-state resistance in sliding-interlayer ferroelectric h-BN van der Waals multiferroic tunnel junction

Full Electrical Control of Multiple Resistance States in Van Der Waals Sliding Multiferroic Tunnel Junctions

Giant tunneling magnetoresistance and electroresistance in α − In 2 Se 3 -based van der Waals multiferroic tunnel junctions

Giant Tunneling Magnetoresistance and Electroresistance in Α−in2se3 -Based Van Der Waals Multiferroic Tunnel Junctions

Sliding Ferroelectric Tunnel Junctions

Giant Tunnelling Electroresistance Through 2D Sliding Ferroelectric Materials.

Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions using VS2

Giant tunneling electroresistance in a 2D bilayer-In<sub>2</sub>Se<sub>3</sub>-based out-of-plane ferroelectric tunnel junction

Giant tunneling electroresistance in 2D bilayer-In 2 Se 3 -based out-of-plane ferroelectric tunnel junction

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Giant tunneling electroresistance in a 2D bilayer-In 2 Se 3 -based out-of-plane ferroelectric tunnel junction.

Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Tunneling electroresistance effect in van der Waals ferroelectric tunnel junction based on graphene/In2Se3/MoS2/graphene heterostructure

Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface

Giant Tunneling Electroresistance in 2-Din-plane Ferroelectric Tunnel Junctions Based on a Α-In2se3/cd3c2 Heterostructure

Two-dimensional antiferroelectric tunnel junction

Giant Tunneling Electroresistance in Two-Dimensional Ferroelectric Tunnel Junctions with Out-of-plane Ferroelectric Polarization

Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization