Two-dimensional antiferroelectric tunnel junction

Jun Ding,Ding-Fu Shao,Ming Li,Li-Wei Wen,Evgeny Y. Tsymbal

DOI: https://doi.org/10.1103/PhysRevLett.126.057601

2021-01-09

Abstract:Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Due to the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In$_2$X$_3$ (X = S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In$_2$X$_3$ bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a non-volatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In$_2$S$_3$ van der Waals bilayers, and predict giant tunneling electroresistance (TER) effects and multiple non-volatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.

Materials Science

What problem does this paper attempt to address?

This paper discusses how to use two-dimensional antiferroelectric tunnel junctions (AFTJs) to address the technical challenges of existing nanoscale resistive switching devices. Traditional ferroelectric tunnel junctions (FTJs) are based on three-dimensional (3D) ferroelectric barrier layers, while the new research focuses on two-dimensional (2D) van der Waals ferroelectric materials, such as In2X3 (X=S, Se, Te) bilayer structures. The weak interlayer coupling in these 2D materials allows for the control of dipole alignment between them by applying voltage, resulting in the switching between ferroelectric and antiferroelectric states and significant changes in the electronic structure.

The paper proposes the concept of a 2D antiferroelectric tunnel junction and demonstrates the stable ferroelectric and antiferroelectric states in In2X3 bilayer structures between different 2D electrodes. The possibility of non-volatile switching is demonstrated through first-principles density functional theory calculations. By modeling quantum-mechanical electron transport in In2S3 bilayers, the study predicts the presence of a large tunneling resistivity effect and multiple non-volatile resistance states driven by ferroelectric-antiferroelectric phase transitions, opening up new avenues for achieving nanoscale memory devices with ultra-high storage density.

In In2Se3, the coexistence of in-plane and out-of-plane ferroelectricity and antiferroelectricity allows for an asymmetric charge screening effect, which enables the maintenance of non-volatile antiferroelectric-ferroelectric phase transitions even in the absence of an external electric field. The paper also discusses the tunneling effects within the plane and perpendicular to the plane, as well as how different electrode materials affect the transport characteristics, and predicts significant variations in the tunneling resistivity.

In summary, the paper attempts to address the problem of constructing more efficient and controllable nanoscale memory devices using novel 2D materials, optimizing the performance of tunnel junctions by exploring the charge dipole arrangements of ferroelectric and antiferroelectric materials.