Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials

Lili Kang,Peng Jiang,Hua Hao,Yanhong Zhou,Xiaohong Zheng,Lei Zhang,Zhi Zeng

DOI: https://doi.org/10.1103/physrevb.103.125414

IF: 3.7

2021-03-15

Physical Review B

Abstract:Two-dimensional (2D) ferroelectric materials (FEMs) and their application in ferroelectric tunnel junctions (FTJs) have attracted a great deal of attention during the past several years due to their great potential in nonvolatile memory devices. Particularly, the all-2D FTJs, which have only atomic-layer thickness, have been demonstrated to show very high tunnel electroresistance (TER) ratio. Nevertheless, to better integrate with the present semiconductor technology, it is necessary to consider metal contacts in the construction of FTJs with 2D FEMs. However, due to the unknown interaction between traditional metals and 2D FEMs, it is not clear whether ferroelectricity still persists when the 2D FEMS are in contact with metals and whether the corresponding FTJs exhibit high TER effect as demanded for memory devices. To probe this, we construct FTJs with top contact between Au(010) and In2Se3, a 2D FEM with out-of-plane ferroelectric polarization. By density functional calculations combined with a nonequilibrium Green function technique, we find that not only the ferroelectricity still persists in the metal/FEM contact, but also a giant TER ratio as high as 104% is achieved. The giant TER arises from the change of the metal/FEM contact from a Schottky type to an Ohmic type accompanying with the ferroelectric polarization reversal. In the meantime, the tunnel barrier height between Au(010) and In2Se3 is zero, which means good ability of electron injection from metal to semiconductor and low contact resistance. Our study suggests that, by properly selecting the metal materials, giant TER ratio and high performance can be achieved in FTJs constructed with 2D FEMs and metal contacts.

physics, condensed matter, applied,materials science, multidisciplinary

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is whether the ferroelectricity of two - dimensional ferroelectric materials (2D FEMs) can be maintained when they are in contact with metals, and whether the ferroelectric tunnel junctions (FTJs) constructed in this case can achieve a huge tunneling electro - resistance (TER) effect. Specifically:

1. **Maintenance of ferroelectricity**: Since traditional three - dimensional ferroelectric materials lose their ferroelectricity when their thickness is reduced below a critical value, this limits their application in device miniaturization. Therefore, researchers have begun to focus on two - dimensional ferroelectric materials, which can maintain ferroelectricity even at the atomic - layer thickness. However, it is not clear whether the ferroelectricity will be affected when two - dimensional ferroelectric materials are in contact with metals.

2. **Huge tunneling electro - resistance (TER) effect**: In order to enable ferroelectric tunnel junctions to be practically applied in non - volatile memories, it is necessary to ensure that they have a high TER ratio. Especially in the case of metal - two - dimensional ferroelectric material contact, whether this effect can be achieved remains an unknown.

To solve these problems, the author selected the two - dimensional ferroelectric material In₂Se₃ in contact with the Au(010) metal, constructed a ferroelectric tunnel junction model, and calculated it through density functional theory (DFT) combined with the non - equilibrium Green's function technique. The research findings are as follows:

- In₂Se₃ still maintains ferroelectricity after being in contact with Au(010).
- By changing the polarization direction of In₂Se₃, the transition from Schottky contact to Ohmic contact can be achieved, resulting in a huge TER ratio (exceeding 10⁴%).

These results indicate that by rationally selecting metal materials, a huge TER ratio and high performance can be achieved in the ferroelectric tunnel junctions of two - dimensional ferroelectric materials in contact with metals, which provides new possibilities for the application of non - volatile memories.

### Key formulas

- The relationship between tunneling conductivity \(G(E)\) and transfer function \(T(E)\):
\[
G(E)=\frac{2e^{2}}{h}T(E)
\]

- Definition of TER ratio:
\[
R = \frac{|G_{\uparrow}-G_{\downarrow}|}{\min(G_{\uparrow},G_{\downarrow})}
\]
where \(G_{\uparrow}\) and \(G_{\downarrow}\) are the tunneling conductivities when the ferroelectric layer is in the upward polarization (\(P_{\uparrow}\)) and downward polarization (\(P_{\downarrow}\)) states respectively.

### Conclusion

The research shows that two - dimensional ferroelectric materials can still maintain ferroelectricity when in contact with metals, and a huge TER ratio can be achieved by controlling the polarization direction, which provides a new approach for the application of non - volatile memories.