Abstract:A universal interface gain mechanism is introduced that significantly amplifies the impact of interface contact barriers on ferroelectric tunneling electro‐resistance (TER). Reversing the polarization state allows the interface to reversibly switch between Ohmic contact and Schottky contact, thereby achieving a giant TER at the nanoscale. This breakthrough overcomes thickness limits in high TER, enabling ultrathin memory devices. Ultrathin ferroelectric tunnel junctions (FTJs) hold considerable promise for next‐generation, high‐speed, low‐power, and high‐density nonvolatile memory applications. Achieving a substantial tunneling electro‐resistance (TER) remains a challenge as the ferroelectric layer is thinned to nanoscale dimensions, often resulting in a diminished or lost polarization. An innovative interface barrier gain mechanism is introduced, employing interface electronic state modulation to precisely control the size of an additional interface barrier. This strategy lessens the dependency of the tunneling barrier on ferroelectric polarization strength, facilitating a remarkable TER even at ferroelectric thicknesses as minimal as ≈1 nm. The focus is on composite FTJs using In2Se3/MTe2 (M = Mo, W), where the inclusion of an MTe2 monolayer disrupts the asymmetric electrode configuration. The weak ferroelectric polarization reversal of the In2Se3 monolayer effectively modulates the electronic state coupling at the In2Se3/MTe2 interface. This modulation leads to variations in the width and height of the Schottky barrier at the heterojunction‐electrode interface corresponding with the ferroelectric polarization reversal, establishing a beneficial Ohmic contact in the "on" state and resulting in an exponential TER increase up to 5.4 × 106%. This work introduces a universal mechanism to overcome the thickness limitations traditionally associated with enhancing TER, marking a significant advancement in the development of ultrathin ferroelectric nonvolatile devices.

Giant Tunnelling Electroresistance Through 2D Sliding Ferroelectric Materials.

Sliding Ferroelectric Tunnel Junctions

Realizing Giant Tunneling Electroresistance in Two-Dimensional Graphene/bip Ferroelectric Tunnel Junction

Giant tunneling electroresistance in 2D bilayer-In 2 Se 3 -based out-of-plane ferroelectric tunnel junction

Giant Tunneling Electroresistance in Two-Dimensional Ferroelectric Tunnel Junctions with Out-of-plane Ferroelectric Polarization

Voltage-tunable giant nonvolatile multiple-state resistance in sliding-interlayer ferroelectric h-BN van der Waals multiferroic tunnel junction

Giant tunneling electroresistance in a 2D bilayer-In 2 Se 3 -based out-of-plane ferroelectric tunnel junction.

Giant Tunneling Electroresistance in 2-Din-plane Ferroelectric Tunnel Junctions Based on a Α-In2se3/cd3c2 Heterostructure

Giant tunneling electroresistance in a 2D bilayer-In<sub>2</sub>Se<sub>3</sub>-based out-of-plane ferroelectric tunnel junction

Giant Tunnel Electroresistance in Two-Dimensional Ferroelectric Tunnel Junctions Constructed with a Sc2CO2/In2Se3 Van Der Waals Ferroelectric Heterostructure

Realizing Tunneling Electroresistance Effect in the Au/h-BN/In2Se3/Au Vertical Ferroelectric Tunnel Junction.

Tunnel junctions based on interfacial 2D ferroelectrics

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP2Se6/Ga2O2O3 Van Der Waals Heterostructure

Giant magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions with 2D ferroelectrics

Enhanced tunneling electroresistance through interfacial charge-modulated barrier in α-In2Se3-based ferroelectric tunnel junction

Giant Tunneling Electro‐Resistance in Ultrathin Ferroelectric Tunnel Junctions: The Interface Barrier Gain Mechanism

Giant Tunneling Electroresistance Arising From Reversible Partial Barrier Metallization In The Natio3/Batio3/Latio3 Ferroelectric Tunnel Junction

Two-dimensional antiferroelectric tunnel junction

Domain-wall Induced Giant Tunneling Electroresistance Effect in Two-dimensional Graphene/In2Se3 Ferroelectric Tunnel Junctions