Giant Electroresistance in Hafnia-Based Ferroelectric Tunnel Junctions Via Enhanced Polarization
Zhaomeng Gao,Weifeng Zhang,Qilan Zhong,Yonghui Zheng,Shuxian Lv,Qiqiao Wu,Yanling Song,Shengjie Zhao,Yunzhe Zheng,Tianjiao Xin,Yiwei Wang,Wei,Xinqian Ren,Jianguo Yang,Chen Ge,Jiahua Tao,Yan Cheng,Hangbing Lyu
DOI: https://doi.org/10.1016/j.device.2023.100004
2023-01-01
Device
Abstract:Hafnia-based ferroelectric tunnel junctions (FTJs) show potential applications in memory, logic, and neuromorphic computation. However, the tunneling electroresistance (TER) effect of FTJs faces great challenge due to weakened polarization as the ferroelectric layer thickness scales down. Here, we report a giant TER of 2 3 107 7 in Hf 0.5 Zr 0.5 O 2 (HZO, 1.5 nm thick)/Nb-doped SrTiO3 3 (NSTO) heterojunctions. The textured HZO film matches well with the NSTO lattice through HZO[001]//NSTO[001], [001] //NSTO [001] , with the orientation of the polar axis parallel to the electric field. Meanwhile, a new polar gradual region with oxygen ion displacement is observed, also contributing to the polarization. Benefiting from the giant TER effect, multi-level states of 32 resistance levels were realized in Pt/HZO(1.5 nm)/NSTO FTJ, making it highly promising in high-density storage and neuromorphic computing. The results provide an appealing method for the design of promising FTJ devices based on ultrathin, hafnia-based oxide heterostructures by controlling the crystal structure and orientation.