Study of MR in Fe/sub 3/O/sub 4/ tunnel junctions

changmin park,yiming shi,yingguo peng,k barmak,robert m white

DOI: https://doi.org/10.1109/INTMAG.2003.1230804

2003-01-01

Abstract:In this paper, we examined the magnetic and structural properties of Fe/sub 3/O/sub 4/ films fabricated by using reactive sputtering as an electrode in a MTJ. We investigated the interface of the MTJ using high resolution transmission electron microscopy.

What problem does this paper attempt to address?

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

C Park,YM Shi,YG Peng,K Barmak,JG Zhu,DE Laughlin,RM White

DOI: https://doi.org/10.1109/tmag.2003.815718

IF: 1.848

2003-01-01

IEEE Transactions on Magnetics

Abstract:Magnetic tunnel junctions with an Fe3O4 top electrode have been fabricated. High resolution transmission electron microscopy (HRTEM) shows that in as-deposited, state, Fe And FeO phases exist at the interface. These two phases a re believed to have formed as a result of the unstable plasma condition at the start of the Fe3O4 deposition. A relatively low magnetoresistance ratio (MR) (3.5%) and low switching field (H-C2) (40 Oe) is observed which is associated with the fact that the FeO phase magnetically isolates the Fe phase from the Fe3O4 phase at the interface. After annealing at 150 degreesC for 5 h, the MR as well as the switching field (H-C2) increases by a factor of two. HRTEM shows that the FeO phase at the interface has transformed into Fe and Fe3O4 in the annealed sample, resulting in the increased MR (7.0%) and higher switching field (H-C2) (300 Oe). However, annealing does not completely remove Fe at the interface, thereby limiting the MR.
First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

shagufta Parveen Asif Akhtar,Santashraya Prasad,Aminul Islam

DOI: https://doi.org/10.1088/2631-8695/ad8338

IF: 1.7

2024-10-04

Engineering Research Express

Abstract:This paper investigates the impact of electrode materials on the Tunnel Magneto-Resistance (TMR) ratio of Magnetic Tunnel Junction (MTJ) device. Four different structures of MTJ have been simulated by using cobalt (Co), Nickel (Ni), Iron (Fe) and two alloy materials of nickel-iron (NiFe) and cobalt-iron (CoFe). These materials have been used as ferromagnetic electrodes. Mulliken population and transmission spectrum observed in both parallel and antiparallel configurations of these devices to understand the spin transport properties and Tunnel Magneto-Resistance (TMR) ratio has been estimated. The first principal study was performed based on density function theory (DFT) and Non-equilibrium Green's Function (NEGF) computational methods using the QuantumATK simulation tool to study properties such as band structure, the density of states (DOS), Spin Transfer Torque (STT), I-V characteristics and TMR. This study explores how different electrode materials affect the Tunnel Magneto-Resistance (TMR) ratio in Magnetic Tunnel Junction (MTJ) devices. With these results, it is observed that cobalt-based MTJ devices (that is Co-MgO-Fe and CoFe-MgO-CoFe) exhibit higher TMR ratio as compared to Nickel- and Iron-based MTJ devices (that is NiFe-MgO-NiFe and Ni-MgO-Fe). As Cobalt has a high spin polarization this property makes it suitable for use in spintronics devices like MTJs, where the manipulation of electron spins is essential for data storage and information processing. These findings can be employed to improve the performance characteristics of the MTJ-based Random Access Memory (MRAM) in the field of spintronics.
STUDING ON ELECTROMAGNETIC CHARACTERS OF Fe/Al2O3/Fe TUNNE LING JUNCTIONS

CY Liu,QY Xu,G Ni,H Sang,YW Du

DOI: https://doi.org/10.7498/aps.49.1897

2000-01-01

Abstract:Using ion-beam-sputtering technique, Fe/Al2O3/Fe magnetic tunneling junctions (MTJ) were fabricated. Tunneling magnetoresistance (TMR) eff ect of MTJ samples has been successfully studied. The chemical composition and t he microstructural characteristics of hard-and soft-magnetic layers, insulating layer, and interface of MTJ were analyzed by X-ray photoelectron spectroscopy an d Atomic force microscopy. The dependence of MR effect on microstructure, chemic al composition, conductance, and Ｉ-Ｖ characteristic of the samples are also di scussed.
Tunnelling Magnetoresistance Effects in Fecogd(T)/Alo/Feco Multilayers

X. J. Bai,M. Yang,J. J. Ge,B. You,W. Zhang,X. R. Zhao,C. D. Cao,J. Du

DOI: https://doi.org/10.1002/pssc.201084185

2012-01-01

Abstract:FeCoGd(t)/AlO/FeCo magnetic tunneling junctions (MTJs) have been fabricated using a shadow mask by magnetron sputtering system on SiO2 wafer, with a simple oxidation in the atmosphere to the bottom electrode FeCoGd layer. From the transmission electron microscopy (TEM) with element content analysis, we found a serious oxidation of the Gd element at the FeCoGd/AlO interface. At room temperature, inverse/normal TMR effects and normal TMR effects were observed simultaneously in the low and high magnetic field region, respectively. The high field curves show superparamagnetic behaviour, which are difficult to be saturated. The saturation field increases with the increase of t. The low field normal or inverse TMR effect is mainly resulted from the existence of the compensation thickness of the FeCoGd layer at room temperature. However, the normal TMR effect in high field region mainly origins from the existence of a granular layer at the FeCoGd/AlO interface consists of FeCo-rich particles embedded in GdO insulating matrix. With the increase of the external magnetic field, the magnetic moments of the FeCo-rich particles in the granular layer gradually rotate to the field direction. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Magnetization Reversal Mechanism of Magnetic Tunnel Junctions

CY Liu,J Li,Y Wang,JY Chen,QY Xu,G Ni,H Sang,YW Du

DOI: https://doi.org/10.1088/1009-1963/11/1/314

2002-01-01

Abstract:Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.
Interfacial interaction in Fe/MgO/Fe magnetic tunneling junctions

M.S. Xue,W. Li,F.J. Wang,J.P. Yao,J.S. Lu

DOI: https://doi.org/10.1016/j.vacuum.2010.09.001

IF: 4

2010-01-01

Vacuum

Abstract:We present a study on interfacial structures and tunneling magnetoresistance (TMR) in Fe/MgO/Fe junctions using a MgO(111) film with {100} facets. It is shown using X-ray photoelectron spectroscopy that a FeO layer occurs at MgO/Fe rather than Fe/MgO interface, which could be used to tune the TMR effect. At the Fe/MgO interface, such a change in electronic structure is attributed to the band bending associated with a change in thickness of Fe films. The present study provides a new understanding on the Fe/MgO/Fe interfacial behavior and metal/oxide barriers involving electron transport.
Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Luca Marnitz,Karsten Rott,Stefan Niehörster,Christoph Klewe,Daniel Meier,Savio Fabretti,Matthäus Witziok,Andreas Krampf,Olga Kuschel,Tobias Schemme,Karsten Kuepper,Joachim Wollschläger,Andy Thomas,Günter Reiss,Timo Kuschel

DOI: https://doi.org/10.1063/1.4917018

2015-04-10

Abstract:Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

Materials Science
The Frist-Principies Study Of Electronic Structure Of Fe/Mgo/Fe Magnetic Tunnel Junctions Interface

Jx Shang,Fh Wang,Xf Bi,Hb Xu

DOI: https://doi.org/10.4028/www.scientific.net/MSF.475-479.2255

2005-01-01

Abstract:In this work series of models were constructed in order to investigate the relationship between atomic and electronic structure and TMR property. Models with normal component interface of Fe/MgO/Fe magnetic tunnel junctions were calculated by first-principles discrete variational method (DVM) within the framework of local spin density functional theory. The SP and TMR ratio of Fe at interface of ferromagnetic layer as well as density of states are analyzed. Our research shows that the thickness of ferromagnetic layers effect much on electronic structure. The interface and surface Fe layers have different feature from that of interior.
Study on Nanophase Magnetic Multi-films

刘存业,李建,陈志谦,陈建勇,徐庆宇,倪刚

DOI: https://doi.org/10.3969/j.issn.1000-5471.2002.02.009

2002-01-01

Abstract:Using ion-beam-sputtering technique with plasma oxidization to create an isolating layer of Al-2O-3, we have fabricated some Fe/Al-2O-3/Fe magnetic tunnel junctions(MTJ) samples. The base pressure of the vacuum chamber equipped with a Kauffman gun was 8.0×10 -5 Pa, and the argon (99.99%) pressure was 2.0×10 -2 Pa when sputtering. The hysteretic curve and V-I character of the junction samples were studied, the double Hc hysteretic loop and a nonlinear V-I curve were observed, which demonstrated that the conductance of the tunneling junctions originates from the spin polarized tunneling effect. Under zero magnetic field the junction resistance changes with the increase of applied junction voltage bias were studird.
Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co2MnGe Heusler alloy as magnetic electrodes

M. Belmeguenai,C. Genevois,F. Zighem,Y. Roussigné,S-M. Chérif,K. Westerholt,A. El Bahoui,A. Fnidiki,P. Moch

DOI: https://doi.org/10.1016/j.tsf.2013.11.090

2013-11-22

Abstract:HRTEM, nano-beam electronic diffraction, energy dispersive X-rays scanning spectroscopy, Vibrating Sample Magnetometry (VSM) and FerroMagnetic Resonance (FMR) techniques are used in view of comparing (static and dynamic) magnetic and structural properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions (TMJ), deposited on various single crystalline substrates (a-plane sapphire, MgO(100) and Si(111)). They allow for providing a correlation between these magnetic properties and the fine structure investigated at atomic scale. The Al2O3 tunnel barrier is always amorphous and contains a large concentration of Co atoms, which, however, is significantly reduced when using a sapphire substrate. The Co layer is polycrystalline and shows larger grains for films grown on a sapphire substrate. The VSM investigation reveals in-plane anisotropy only for samples grown on a sapphire substrate. The FMR spectra of the TMJs are compared to the obtained ones with a single Co and Co2MnGe films of identical thickness deposited on a sapphire substrate. As expected, two distinct modes are detected in the TMJs while only one mode is observed in each single film. For the TMJ grown on a sapphire substrate the FMR behavior does not significantly differ from the superposition of the individual spectra of the single films, allowing for concluding that the exchange coupling between the two magnetic layers is too small to give rise to observable shifts. For TMJs grown on a Si or on a MgO substrate the resonance spectra reveal one mode which is nearly identical to the obtained one in the single Co film, while the other observed resonance shows a considerably smaller intensity and cannot be described using the magnetic parameters appropriate to the single Co2MnGe film.

Materials Science
Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction

BI Xiao-fang

IF: 5.7

2006-01-01

Chinese Journal of Aeronautics

Abstract:The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses: Fe(3)MgO(t)Fe(3) (t=1,3,5,7) and with Fe of varied thicknesses: Fe(t)MgO(3)Fe(t) (t=3,4,5,6,7) were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The mag-netic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance (TMR) ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers.
Structural and Magnetic Properties of Fe2crsi Heusler Alloy and Tunneling Magneto Resistance of Its Magnetic Tunneling Junctions

Yu-Pu Wang,Jin-Jun Qiu,Hui Lu,Qi-Jia Yap,Wen-Hong Wang,Gu-Chang Han,Duc-The Ngo,Kie-Leong Teo

DOI: https://doi.org/10.1109/inec.2013.6466002

2013-01-01

Abstract:We report the magnetic properties, microstructure and surface morphology of epitaxially grown Fe2CrSi films. Highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400°C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.
Interface study of FeMgOFe magnetic tunnel junctions using 3D Atom Probe

B.Mazumder,M.Gruber,A.Vella,F.Vurpillot,B. Deconihout

DOI: https://doi.org/10.48550/arXiv.1105.5099

2011-05-26

Abstract:A detailed interface study was conducted on a Fe/MgO/Fe system using laser assisted 3D atom probe. It exhibits an additional oxide formation at the second interface of the multilayer structure independent of laser wavelength, laser fluence and the thickness of the tunnel barrier. We have shown with the help of simulation that this phenomena is caused by the field evaporation of two layers having two different evaporation

Atomic Physics,Materials Science
Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment

Crina Ghemes,Mihai Tibu,Oana-Georgiana Dragos-Pinzaru,Gabriel Ababei,George Stoian,Nicoleta Lupu,Horia Chiriac

DOI: https://doi.org/10.3390/ma17112554

IF: 3.4

2024-05-26

Materials

Abstract:In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the performance of the structure. Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to investigate the effects of deposition parameters on the surface roughness and thickness of individual layers within the MTJ structure. Furthermore, this study investigates the influence of thin films thickness on the magnetoresistive properties of the MTJ structure, focusing on the free ferromagnetic layer and the barrier layer (MgO). Through systematic analysis and optimization of the deposition parameters, this study demonstrates a significant improvement in the tunnel magnetoresistance (TMR) of the MTJ structure of 10% on average, highlighting the importance of precise control over thin films properties for enhancing device performance.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Microstructure of Annealed Magnetic Tunnel Junction by Electron Microscopy

QY Xu,YG Wang,Z Zhang,B You,J Du,A Hu

DOI: https://doi.org/10.1063/1.1567037

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:Transmission electron microscopy, high-resolution electron microscopy, and electron holography were used to study the microstructure of CoFe/AlOx/Co magnetic tunnel junctions (MTJs) isochronally annealed up to 400 °C. A potential barrier across the metal/oxide interfaces was observed for the as-deposited MTJ sample, and was changed into a well for the MTJ samples annealed at 200 and 400 °C, respectively. A shallow potential well was found when the MTJ was annealed at 200 °C and the well became deeper as the annealing temperature increased to 400 °C. The potential change may attribute to the formation of nonmagnetic metallic Al atoms or clusters when the MTJ sample was annealed at 200 °C and the rest content of the barrier layer was more close to Al2O3, which results in the enhancement of tunneling magnetoresistance (TMR). When the MTJ sample was annealed at 400 °C, more Co and Fe atoms or clusters might diffuse from the ferromagnetic layers into the barrier layer, resulting in the deeper well, and thus significantly decrease the TMR value due to the severe spin-flip scattering.
High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

Jiaqi Zhou,Weisheng Zhao,Shouzhong Peng,Junfeng Qiao,Jacques-Olivier Klein,Xiaoyang Lin,Youguang Zhang,Arnaud Bournel

DOI: https://doi.org/10.1109/tmag.2017.2707079

IF: 1.848

2017-01-01

IEEE Transactions on Magnetics

Abstract:The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) is influenced by heavy metal capping layer due to the interfacial effect. We report a systematic first-principles study on MTJ based on CoFe/MgO with capping layer, demonstrate that TMR ratios are sensitive to capping layer material, and show that TMR in Mo-capped MTJ is three times as high as that in Ta-capped MTJ. Besides, TMR in Mo-capped MTJ remains high at finite voltage bias. By analyzing the transmission spectrum and density of scattering states, we found that coherent transmission of $\Delta _{1}$ state dominates the majority-spin conductance in Mo-capped MTJ, while the resonant tunneling contributes significantly in Ta-capped MTJ. The evolution of TMR for varying MgO and CoFe thickness in Mo-capped MTJ is presented. TMR oscillates as a function of CoFe thickness because of the confined wave function in ferromagnetic layer, while TMR rises with MgO thickness increasing due to the enhanced filtering effect of MgO. This work clarifies the physical mechanism on high TMR in Mo-capped MTJ, which is promising to benefit the design of spintronics device.
Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

Michael A. Gribelyuk,Alan Kalitsov,Wonjoon Jung,Yudi Wang,Michael Tran,Xiaoyu Xu,Tiffany Santos

DOI: https://doi.org/10.1063/5.0199011

IF: 2.877

2024-03-26

Journal of Applied Physics

Abstract:Atomic-scale spectroscopic imaging of sputtered magnetic tunnel junction structures with a thick oxygen-rich MgO barrier reveals the diffusion of iron and cobalt into the MgO barrier from CoFeB electrodes. First principles calculations are performed to (1) confirm that Fe diffusion through Mg vacancies is energetically favorable, (2) quantify the reduction of interfacial perpendicular magnetic anisotropy due to Fe diffusion into MgO, and (3) predict that the presence of Fe impurities in MgO causes an increased leakage and a tunneling magnetoresistance decrease. Through the chemical shift of the Fe L3 edge and the peak ratio Fe L3/Fe L2 measured by electron energy loss spectroscopy, we suggest that, within MgO, iron with mixed oxidation state Fe2+ and Fe3+ or higher is found in the as-grown structure, which is reduced by annealing to Fe2+. These results indicate that the stoichiometry of as-deposited MgO barrier layers plays an important role in controlling the microstructure and optimizing the performance of magnetic tunnel junctions.

physics, applied
Microstructure Investigation of Fe/Al2o3/Fe Tunneling Junction

H Chen,QY Xu,G Ni,J Lu,H Sang,SY Zhang,YW Du

DOI: https://doi.org/10.1063/1.369923

IF: 2.877

1999-01-01

Journal of Applied Physics

Abstract:A series of Fe/Al2O3/Fe tunneling junction samples were prepared by ion beam sputtering technique. After deposited, the Al layers in a series of samples were exposed to the air for 24–100 h to obtain Al2O3 layers (100 Å) with different oxidation quality. A tunneling magnetoresistance (TMR) value of 5.89% was observed in the sample with the Al layer oxidized for 72 h. The I–V curve of this sample shows a nonlinear relationship, indicating the existence of well metal–insulator contact in the sample. The microstructures of these samples were analyzed by using x-ray photoelectron spectroscopy. The results show that good Al2O3 layers are formed in all samples, but there exists an interdiffusion interface between the Fe and Al2O3 (with Al metal inclusions) layer which greatly influences the TMR effect.
First-Principle Study on the Electronic Structure and Magnetic Properties in Fe/Mgo/Fe Magnetic Tunnel Junction with Mg Insertion Layer

Fan Yang,Xiaofang Bi

DOI: https://doi.org/10.1016/j.jmmm.2008.03.059

IF: 3.097

2008-01-01

Journal of Magnetism and Magnetic Materials

Abstract:The effect of a Mg insertion layer between the Fe electrode and the MgO barrier layer on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction has been studied by first-principle method. Two models of (a) Fe(100)/MgO(100)/Fe(100) and (b) Fe(100)/Mg/MgO(100)/Mg/Fe(100) were established. Our calculation results show that the Mg insertion layer has enhanced both the spin polarization and the magnetic moment of its adjacent Fe layer. The results have been discussed in terms of the variation in the DOS features and charge transfer with the Mg insertion layer.
Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Han-Chun Wu,Cormac Ó Coileáin,Mourad Abid,Ozhet Mauit,Askar Syrlybekov,Abbas Khalid,Hongjun Xu,Riley Gatensby,Jing Jing Wang,Huajun Liu,Li Yang,Georg S Duesberg,Hong-Zhou Zhang,Mohamed Abid,Igor V Shvets

DOI: https://doi.org/10.1038/srep15984

2015-11-02

Abstract:Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe3O4/MgO/Fe3O4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe3O4 at the interface between Fe3O4 layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS2) is a transition metal dichalcogenide (TMD) semiconductor with distinctive electronic, optical, and catalytic properties. Here, we show based on the first principle calculations that Fe3O4 keeps a nearly fully spin polarized electron band at the interface between MoS2 and Fe3O4. We also present the first attempt to fabricate the Fe3O4/MoS2/Fe3O4 MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS2 can be a good barrier material for Fe3O4 based MTJs. Our calculations also indicate that junctions incorporating monolayer or bilayer MoS2 are metallic.

Study of MR in Fe/sub 3/O/sub 4/ tunnel junctions

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

STUDING ON ELECTROMAGNETIC CHARACTERS OF Fe/Al2O3/Fe TUNNE LING JUNCTIONS

Tunnelling Magnetoresistance Effects in Fecogd(T)/Alo/Feco Multilayers

Magnetization Reversal Mechanism of Magnetic Tunnel Junctions

Interfacial interaction in Fe/MgO/Fe magnetic tunneling junctions

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

The Frist-Principies Study Of Electronic Structure Of Fe/Mgo/Fe Magnetic Tunnel Junctions Interface

Study on Nanophase Magnetic Multi-films

Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co2MnGe Heusler alloy as magnetic electrodes

Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction

Structural and Magnetic Properties of Fe2crsi Heusler Alloy and Tunneling Magneto Resistance of Its Magnetic Tunneling Junctions

Interface study of FeMgOFe magnetic tunnel junctions using 3D Atom Probe

Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment

Microstructure of Annealed Magnetic Tunnel Junction by Electron Microscopy

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

Microstructure Investigation of Fe/Al2o3/Fe Tunneling Junction

First-Principle Study on the Electronic Structure and Magnetic Properties in Fe/Mgo/Fe Magnetic Tunnel Junction with Mg Insertion Layer

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions