Microstructure of Annealed Magnetic Tunnel Junction by Electron Microscopy

QY Xu,YG Wang,Z Zhang,B You,J Du,A Hu
DOI: https://doi.org/10.1063/1.1567037
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:Transmission electron microscopy, high-resolution electron microscopy, and electron holography were used to study the microstructure of CoFe/AlOx/Co magnetic tunnel junctions (MTJs) isochronally annealed up to 400 °C. A potential barrier across the metal/oxide interfaces was observed for the as-deposited MTJ sample, and was changed into a well for the MTJ samples annealed at 200 and 400 °C, respectively. A shallow potential well was found when the MTJ was annealed at 200 °C and the well became deeper as the annealing temperature increased to 400 °C. The potential change may attribute to the formation of nonmagnetic metallic Al atoms or clusters when the MTJ sample was annealed at 200 °C and the rest content of the barrier layer was more close to Al2O3, which results in the enhancement of tunneling magnetoresistance (TMR). When the MTJ sample was annealed at 400 °C, more Co and Fe atoms or clusters might diffuse from the ferromagnetic layers into the barrier layer, resulting in the deeper well, and thus significantly decrease the TMR value due to the severe spin-flip scattering.
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