Thermal Stability of the Magnetic Tunnel Junctions with Nano-Oxide Layers

YQ Feng,LN Hou,T Zhu,SD Yao,WS Zhan
DOI: https://doi.org/10.7498/aps.54.4340
2005-01-01
Abstract:The thermal stability is improved in a magnetic tunnel junction with a nano-oxide layer induced between the antiferromagnetic and pinned ferromagnetic layers, in which the annealing temperature is increased about 40 degrees C. By using Rutherford backscattering spectroscopy, it has been found that the interdiffusion of Mn atoms, responsible for the decrease of TMR during the annealing process, is suppressed across such nano-oxide layer.
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