Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur

X-Ray Observations of V4641 SGR (= SAX J1819.3-2525) During the Brief and Violent Outburst of 2003

Annealing Effect of Magnetic Tunnel Junctions with One Feox Layer Inserted at the Al2o3/Cofe Interface

Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance

Annealing of Cofeb/Mgo Based Single and Double Barrier Magnetic Tunnel Junctions: Tunnel Magnetoresistance, Bias Dependence, and Output Voltage

40% Tunneling Magnetoresistance after Anneal at 380 °C for Tunnel Junctions with Iron-Oxide Interface Layers

Effect of Annealing Temperature on Permeability and Giant Magneto-Impedance of Fe-based Amorphous Ribbon

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Tuning the linear field range of tunnel magnetoresistive sensor with MgO capping in perpendicular pinned double-interface CoFeB/MgO structure

Thermal Stability of Ir-Mn∕Co-Fe-B∕Al-O∕Co-Fe-B Tunnel Junctions

Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions

Tunneling magnetoresistance in MgO tunnel junctions with Fe-based leads in empirically corrected density functional theory

Microstructure of Annealed Magnetic Tunnel Junction by Electron Microscopy

Thermal Characterization of Ultrathin MgO Tunnel Barriers

Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

Tunable Linear Magnetoresistance In Mgo Magnetic Tunnel Junction Sensors Using Two Pinned Cofeb Electrodes