Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

Annealing Effect of Magnetic Tunnel Junctions with One Feox Layer Inserted at the Al2o3/Cofe Interface

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

Tunneling magnetoresistance in MgO tunnel junctions with Fe-based leads in empirically corrected density functional theory

Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur

Tunable magneto-Seebeck effect in Co2FeSi/MgO/Co2FeSi heterostructure via optimized interfacial engineering

Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

40% Tunneling Magnetoresistance after Anneal at 380 °C for Tunnel Junctions with Iron-Oxide Interface Layers

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

Transport Properties of High-Performance All-Heusler Co2CrSi/Cu2CrAl/Co2CrSi Giant Magnetoresistance Device

An all-Heusler magnetic tunnel junction model which provides a probability to realize maximal tunneling magnetoresistance at room temperature

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Thermoelectric effects in FeCo|MgO|FeCo magnetic tunnel junctions

The Tunneling Magnetoresistance of Co-35(Sio2)(65) Nanogranular Films