Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Electrically Induced Ferromagnetism At Room Temperature In Cobalt-Doped Titanium Dioxide

40% Tunneling Magnetoresistance after Anneal at 380 °C for Tunnel Junctions with Iron-Oxide Interface Layers

Annealing Effect of Magnetic Tunnel Junctions with One Feox Layer Inserted at the Al2o3/Cofe Interface

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

High magnetoresistance performance of epitaxial half-metallic CrO 2 -based magnetic junctions

Magnetic oxide semiconductors

Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Room Temperature Ferromagnetism Induced by Electric Field in Cobalt-Doped Tio2

Room Temperature Magnetoresistance in CoFeB/SrTiO3/CoFeB Magnetic Tunnel Junctions Deposited by Ion Beam Sputtering

Temperature and Bias-Assisted Transport Properties of LSMO/AlO/CoFeB Magnetic Tunnel Junction

Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co

Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Room Temperature Ferromagnetic Semiconductor Rutile Ti1-xCoxO2-δEpitaxial Thin Films Grown by Sputtering Method