High magnetoresistance performance of epitaxial half-metallic CrO 2 -based magnetic junctions

Zhenhua Zhang,Ming Cheng,Yong Liu,Dengjing Wang,Ke Wang,Rui Xiong,Zhihong Lu,ZhiQiang Fan
DOI: https://doi.org/10.1039/d2cp05015c
IF: 3.3
2022-12-27
Physical Chemistry Chemical Physics
Abstract:Half-metallic chromium dioxide (CrO 2 ) is an ideal spintronic material due to its near full spin polarization and ultralow Gilbert damping at room temperature. Based on theoretical calculations, we found that the tunneling magnetoresistance (TMR) ratios of CrO 2 /XO 2 /CrO 2 (X= Ti, Sn) magnetic tunnel junctions (MTJ) can reach up to the order of magnitude of 10 5 %, and the magnetoresistance (MR) ratio for CrO 2 /RuO 2 /CrO 2 magnetic junctions (MJ) can reach the order of magnitude of 10 4 %. In addition, we have succeeded to fabricate epitaxial CrO 2 -based MTJs (CrO 2 /TiO 2 /CrO 2 and CrO 2 /TiO 2 /Co 2 FeAl) with variational thickness of TiO 2 tunnel barrier. Evident TMR effects are observed for all CrO 2 -based MTJs with a highest MR ratio of 8.55 % for CrO 2 /TiO 2 /Co 2 FeAl MTJ at 10 K. The MR ratios of CrO 2 -based MTJs in our studies are low than theoretical expectations, which may be due to the possible mixture of interface atoms and Cr magnetization reversal. Moreover, the existence of oxygen vacancy in TiO 2 tunnel barrier can also significantly weaken the TMR effect due to the increased spin scattering, and the annealing treatment in oxygen atmosphere leads to an increase of MR ratio about 33 % for CrO 2 /TiO 2 / Co 2 FeAl MTJ in comparison of the unannealed one, which is consistent with theoretical calculations.
chemistry, physical,physics, atomic, molecular & chemical
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