Magnetic oxide semiconductors

T. Fukumura,H. Toyosaki,Y. Yamada

DOI: https://doi.org/10.1088/0268-1242/20/4/012

2005-04-07

Abstract:Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.

Materials Science

What problem does this paper attempt to address?

### What problem does this paper attempt to solve?

This paper primarily explores the potential of magnetic oxide semiconductors (especially those doped with transition metal elements) as high-temperature ferromagnetic semiconductors, which is of great significance for achieving semiconductor spintronics at room temperature. Specifically:

1. **Ferromagnetism Evaluation**:
- The paper thoroughly examines the properties of several magnetic oxide semiconductors, including magnetism, magneto-optical effects, and anomalous Hall effects, to assess the feasibility of their ferromagnetism.

2. **Study of Specific Materials**:
- The paper focuses on the ferromagnetism of cobalt-doped titanium dioxide (Co-doped TiO₂) and transition metal-doped zinc oxide (transition metal-doped ZnO).

3. **Preparation Methods and Characterization**:
- Various methods for preparing magnetic oxide semiconductors are studied, and they are characterized through multiple experimental techniques such as magnetization measurements, magneto-optical effects, and anomalous Hall effects.

4. **Existing Issues and Future Directions**:
- The paper addresses current controversies in the research, including the confirmation and origin of ferromagnetism, and points out issues that need to be resolved in further studies, such as controlling the relationship between ferromagnetism and carrier density.

In summary, this paper aims to promote the application and development of magnetic oxide semiconductors in the field of spintronics through a comprehensive analysis of existing research results.