Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton,C. R. Abernathy,M. E. Overberg,G. T. Thaler,D. P. Norton,N. Theodoropoulou,A. F. Hebard,Y. D. Park,F. Ren,J. Kim,L. A. Boatner
DOI: https://doi.org/10.1063/1.1517164
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base and a fairly good understanding of the basic electrical and optical properties. The introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. There are a number of other potential dopant ions that could be employed (such as Fe, Ni, Co, Cr) as suggested by theory [see, for example, Sato and Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 39, L555 (2000)]. Growth of these ferromagnetic materials by thin film techniques, such as molecular beam epitaxy or pulsed laser deposition, provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is complex and appears to depend on a number of factors, including Mn–Mn spacing, and carrier density and type. For example, in a simple Ruderman–Kittel–Kasuya–Yosida carrier-mediated exchange mechanism, the free-carrier/Mn ion interaction can be either ferromagnetic or antiferromagnetic depending on the separation of the Mn ions. Potential applications for ferromagnetic semiconductors and oxides include electrically controlled magnetic sensors and actuators, high-density ultralow-power memory and logic, spin-polarized light emitters for optical encoding, advanced optical switches and modulators and devices with integrated magnetic, electronic and optical functionality.
physics, applied
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to achieve ferromagnetism at room temperature or above in wide - band - gap semiconductors and oxides. Specifically, the author focuses on developing new microelectronic devices with practical application value by introducing specific transition metals (such as Mn, Fe, Ni, Co, Cr, etc.) into these materials. These devices can utilize the spin degree of freedom of electrons and provide new functions, for example: 1. **Electric - field - controlled magnetic sensors and actuators**: Control magnetism through an external electric field to achieve more efficient sensing and actuating functions. 2. **High - density ultra - low - power - consumption storage and logic devices**: Utilize spin characteristics to achieve higher - density and lower - power - consumption storage and logic circuits. 3. **Polarized light emitters**: Used for optical encoding to generate polarized light. 4. **Advanced optical switches and modulators**: Devices that integrate magnetic, electronic and optical functions. The paper pays special attention to the following types of materials: - **Nitride semiconductors**: Such as GaN, GaP and ZnO. These materials already have a certain technological basis and a relatively good understanding of their basic electrical and optical properties. - **Oxide semiconductors**: Such as ZnO, CuAlO2, etc. These materials can achieve p - type conduction in some cases, which is conducive to achieving ferromagnetism. Through thin - film growth techniques such as molecular beam epitaxy (MBE) or pulsed - laser deposition (PLD), the doping concentration can be precisely controlled to prepare single - phase layers. The paper also discusses the mechanisms for achieving ferromagnetism, including the influence of factors such as Mn - Mn spacing, carrier density and type. For example, in the simple Ruderman - Kittel - Kasuya - Yosida (RKKY) carrier - mediated exchange mechanism, the interaction between free carriers and Mn ions can be ferromagnetic or antiferromagnetic, depending on the distance between Mn ions. In conclusion, this paper aims to explore and develop wide - band - gap ferromagnetic semiconductor and oxide materials with practical value to promote the development of spintronics.