Abstract:Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base and a fairly good understanding of the basic electrical and optical properties. The introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. There are a number of other potential dopant ions that could be employed (such as Fe, Ni, Co, Cr) as suggested by theory [see, for example, Sato and Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 39, L555 (2000)]. Growth of these ferromagnetic materials by thin film techniques, such as molecular beam epitaxy or pulsed laser deposition, provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is complex and appears to depend on a number of factors, including Mn–Mn spacing, and carrier density and type. For example, in a simple Ruderman–Kittel–Kasuya–Yosida carrier-mediated exchange mechanism, the free-carrier/Mn ion interaction can be either ferromagnetic or antiferromagnetic depending on the separation of the Mn ions. Potential applications for ferromagnetic semiconductors and oxides include electrically controlled magnetic sensors and actuators, high-density ultralow-power memory and logic, spin-polarized light emitters for optical encoding, advanced optical switches and modulators and devices with integrated magnetic, electronic and optical functionality.

Voltage-controlled Ferromagnetic Order in MnGe Quantum Dots

Electric-field Controlled Ferromagnetism in MnGe Magnetic Quantum Dots.

Room-temperature Electric-Field Controlled Ferromagnetism in Mn0.05Ge0.95 Quantum Dots.

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn 0.05 Ge 0.95 quantum dots

Magnetic Mn-Doped Ge Nanostructures

Quest of Electric Field Controlled Spintronics in Mnge

Enhancing electric-field control of ferromagnetism through nanoscale engineering of high- T c Mn x Ge 1− x nanomesh

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

High Curie Temperature Achieved in the Ferromagnetic MnxGe<sub>1-x</sub>/Si Quantum Dots Grown by Ion Beam Co-Sputtering

High Curie Temperature Achieved in the Ferromagnetic Mn<sub>x</sub>Ge<sub>1−x</sub>/Si Quantum Dots Grown by Ion Beam Co-Sputtering

Electric-field control of magnetism in few-layered van der Waals magnet

(Invited) Growth of MnGe Nanostructures for Spintronics Applications

High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Wide band gap ferromagnetic semiconductors and oxides

Graphene Activating Room-Temperature Ferromagnetic Exchange in Cobalt-Doped ZnO Dilute Magnetic Semiconductor Quantum Dots.