Room Temperature Ferromagnetism Induced by Electric Field in Cobalt-Doped Tio2

T. Fukumura,Y. Yamada,K. Ueno,H. T. Yuan,H. Shimotani,Y. Iwasa,L. Gu,S. Tsukimoto,Y. Ikuhara,M. Kawasaki
DOI: https://doi.org/10.1149/05004.0053ecst
2013-01-01
ECS Transactions
Abstract:Electric field induced ferromagnetism at room temperature in cobalt-doped titanium dioxide was demonstrated by means of electric double layer transistor. This result represents that a carrier-mediated exchange coupling plays a principal role in the high temperature ferromagnetism in this compound. Accordingly, this compound is a promising material for room temperature semiconductor spintronics.
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